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Jun Sun

Researcher at Southeast University

Publications -  37
Citations -  1468

Jun Sun is an academic researcher from Southeast University. The author has contributed to research in topics: Graphene & Plasticity. The author has an hindex of 16, co-authored 35 publications receiving 1240 citations. Previous affiliations of Jun Sun include University of Strasbourg & Xi'an Jiaotong University.

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Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

TL;DR: It is found that CFs are found to start growing from the anode rather than having to reach the cathode and grow backwards, and a new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.
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Liquid-like pseudoelasticity of sub-10-nm crystalline silver particles

TL;DR: Using in situ high-resolution transmission electron microscopy, it is found that Ag nanoparticles can be deformed like a liquid droplet but remain highly crystalline in the interior, with no sign of dislocation activity during deformation.
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Thermodynamic and Kinetic Analysis of Lowtemperature Thermal Reduction of Graphene Oxide

TL;DR: In this article, the thermodynamic state and kinetic process of low-temperature deoxygenation reaction of graphene oxide (GO) have been investigated for better understanding on the reduction mechanism by using Differential Scanning Calorimetry (DSC), Thermogravimetry-Mass Spectrometry (TG-MS), and X-ray Photo-electron Spectroscopy (XPS).
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Graphene Scaffolds Enhanced Photogenerated Electron Transport in ZnO Photoanodes for High-Efficiency Dye-Sensitized Solar Cells

TL;DR: Graphene and ZnO as two star materials were united to constitute the photoanode of dye-sensitized solar cells (DSSCs) in this article, where they exhibited a high short-circuit photocurrent density (Jsc) of 10.89 mA/cm2 and a power conversion efficiency (PCE) of 3.19%, which were increased by 43.48% and 38.09%, respectively.
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In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

TL;DR: In this paper, the authors dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO2/Pt device and show that Ni is the main composition of the conductive filaments.