Two organolead halide perovskite nanocrystals, CH3NH3PbBr3 and CH3NH3PbI3, were found to efficiently sensitize TiO2 for visible-light conversion in photoelectrochemical cells. When self-assembled on mesoporous TiO2 films, the nanocrystalline perovskites exhibit strong band-gap absorptions as semiconductors. The CH3NH3PbI3-based photocell with spectral sensitivity of up to 800 nm yielded a solar energy conversion efficiency of 3.8%. The CH3NH3PbBr3-based cell showed a high photovoltage of 0.96 V with an external quantum conversion efficiency of 65%.

Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells

Multiferroic materials, which show simultaneous ferroelectric and magnetic ordering, exhibit unusual physical properties — and in turn promise new device applications — as a result of the coupling between their dual order parameters. We review recent progress in the growth, characterization and understanding of thin-film multiferroics. The availability of high-quality thin-film multiferroics makes it easier to tailor their properties through epitaxial strain, atomic-level engineering of chemistry and interfacial coupling, and is a prerequisite for their incorporation into practical devices. We discuss novel device paradigms based on magnetoelectric coupling, and outline the key scientific challenges in the field.

Multiferroics: progress and prospects in thin films.

First-principles calculations have evolved from mere aids in explaining and supporting experiments to powerful tools for predicting new materials and their properties. In the first part of this review we describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors. We will pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels. In the second part of the review we will illustrate these capabilities with examples for defects and impurities in nitride semiconductors. Point defects have traditionally been considered to play a major role in wide-band-gap semiconductors, and first-principles calculations have been particularly helpful in elucidating the issues. Specifically, calculations have shown that the unintentional n-type conductivity that has often been observed in as-grown GaN cannot be a...

First-principles calculations for defects and impurities: Applications to III-nitrides

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Phosphor-converted white light-emitting diodes (pc-WLEDs) are emerging as an indispensable solid-state light source for the next generation lighting industry and display systems due to their unique properties including but not limited to energy savings, environment-friendliness, small volume, and long persistence. Until now, major challenges in pc-WLEDs have been to achieve high luminous efficacy, high chromatic stability, brilliant color-rending properties, and price competitiveness against fluorescent lamps, which rely critically on the phosphor properties. A comprehensive understanding of the nature and limitations of phosphors and the factors dominating the general trends in pc-WLEDs is of fundamental importance for advancing technological applications. This report aims to provide the most recent advances in the synthesis and application of phosphors for pc-WLEDs with emphasis specifically on: (a) principles to tune the excitation and emission spectra of phosphors: prediction according to crystal field theory, and structural chemistry characteristics (e.g. covalence of chemical bonds, electronegativity, and polarization effects of element); (b) pc-WLEDs with phosphors excited by blue-LED chips: phosphor characteristics, structure, and activated ions (i.e. Ce 3+ and Eu 2+ ), including YAG:Ce, other garnets, non-garnets, sulfides, and (oxy)nitrides; (c) pc-WLEDs with phosphors excited by near ultraviolet LED chips: single-phased white-emitting phosphors (e.g. Eu 2+ –Mn 2+ activated phosphors), red-green-blue phosphors, energy transfer, and mechanisms involved; and (d) new clues for designing novel high-performance phosphors for pc-WLEDs based on available LED chips. Emphasis shall also be placed on the relationships among crystal structure, luminescence properties, and device performances. In addition, applications, challenges and future advances of pc-WLEDs will be discussed.

Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties

As the GaN material research is reaching maturity with the phenomenal success in LED industry, there is now need to
look beyond conventional epitaxy. In this paper we will summarize a few novel directions that we are pursuing. In the
first part of this paper, we highlighted our effort to grow single crystal GaN on amorphous substrate. With the successive
applications of a phenomenon called evolutionary selection along two perpendicular axes, we remove the degree of
freedom in grain orientations from 3 to 0 and successfully prepared single-crystalline GaN on amorphous oxide template.
We dedicated the second part of this paper to our recent findings in GaN nanomembrane. Via conductivity selective
electrochemical etching, we have fabricated GaN nanomembrane as thin as 90 nm. The thin and “soft” GaN
nanomembrane is proven to maintain its as-grown crystal quality. We have also demonstrated a 300 nm thick
InGaN/GaN nanomembrane LED.

New directions in GaN material research: thinner and smaller

Advances in nitride-based blue and violet light emitters - most notably high-efficiency LEDs and edge-emitting diode lasters - now suggest possibilities for more advanced types of geometry such as those based on vertical-cavity surface-emitting structures.

Progress towards nitride blue and near-UV VCSELs

The evolution of stress in gallium nitride films on sapphire has been measured in real- time during metal organic chemical vapor deposition. In spite of the 161%0 compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050"C. Furthermore, in-situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling.

/pdf/gan-stress-evolution-during-metal-organic-chemical-vapor-50ecc567tg.pdf

GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for epitaxial selective area doping, which in turn is needed for the formation of lateral PN junctions and advanced device architectures. In this work, we report the electrical properties of etched-and-regrown GaN PN diodes using an in situ Cl-based precursor, tertiary butylchloride (TBCl). We demonstrated a regrowth diode with I-V characteristics approaching that from a continuously grown reference diode. The sources of unintentional contamination from the silicon (Si) impurity and the mediating effect of Si during the TBCl etching are also investigated in this study. This work points to the potential of in situ TBCl etching toward the realization of GaN lateral PN junctions.

Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching.

The authors have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced both by exposure to deuterium gas and to ECR plasmas. A density functional approach including lattice relaxation, was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Computer simulations of channeling yields were used to compare results of channeling measurements with calculated yields for various predicted deuterium lattice configurations.

/pdf/lattice-location-of-deuterium-in-plasma-and-gas-charged-mg-rhr6mswedj.pdf

Jung Han

Papers

New directions in GaN material research: thinner and smaller

Progress towards nitride blue and near-UV VCSELs

GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching.

Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN