Showing papers in "MRS Proceedings in 1999"

Oxidative Corrosion of Spent uo2 Fuel in Vapor and Dripping Groundwater at 90°C

Abstract: Corrosion of spent UO{sub 2} fuel has been studied in experiments conducted for nearly six years. Oxidative dissolution in vapor and dripping groundwater at 90 C occurs via general corrosion at fuel-fragment surfaces. Dissolution along fuel-grain boundaries is also evident in samples contacted by the largest volumes of groundwater, and corroded grain boundaries extend at least 20 or 30 grains deep (> 200 {micro}m), possibly throughout millimeter-sized fragments. Apparent dissolution of fuel along defects that intersect grain boundaries has created dissolution pits that are 50 to 200 nm in diameter. Dissolution pits penetrate 1-2 {micro}m into each grain, producing a ''worm-like'' texture along fuel-grain-boundaries. Sub-micrometer-sized fuel shards are common between fuel grains and may contribute to the reactive surface area of fuel exposed to groundwater. Outer surfaces of reacted fuel fragments develop a fine-grained layer of corrosion products adjacent to the fuel (5-15 {micro}m thick). A more coarsely crystalline layer of corrosion products commonly covers the fine-grained layer, the thickness of which varies considerably among samples (from less than 5 {micro}m to greater than 40 {micro}m). The thickest and most porous corrosion layers develop on fuel fragments exposed to the largest volumes of groundwater. Corrosion-layer compositions depend strongly on water flux, with uranyl oxy-hydroxides predominating in vapor experiments, and alkali and alkaline earth uranyl silicates predominating in high drip-rate experiments. Low drip-rate experiments exhibit a complex assemblage of corrosion products, including phases identified in vapor and high drip-rate experiments.

Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply

Abstract: Titanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply of a reactant was followed by a purge with inert gas before introducing another reactant onto the substrate in order to prevent gas-phase reactions. In one set of experiments the reactants were supplied separately in the sequence of TDMAT. silane. and ammonia. The Si content of the films remained constant at 18 at.%. and the film growth rate varied little from 0.24 nm per reactant-supply-cycle, even though silane partial pressure varied from 0.002 to 0.1 torr. In the other set of experiments silane and ammonia were simultaneously supplied in the sequence of TDMAT and silane/ammonia. The Si content varied from 3 to 23 at.% as the silane-to-ammonia ratio varied from 0.01 to 10. Atomic layer deposition of Ti-Si-N films allows the precise control of Si content as well as film thickness.

Calcium Phosphate Cements: Chemistry, Properties, and Applications

Abstract: This paper reviews recent studies on self-setting calcium phosphate cements (CPC). Discussions are focused on the cement setting reactions, the products formed, those properties of the cements that contribute to their clinical efficacy, and areas of future improvements that could make CPC useful in a wider range of applications. The strengths of CPC are considerably lower than ceramic calcium phosphate biomaterials and are also lower than some of the dental cements. On the other hand, the combination of self-setting capability and high biocompatibility makes CPC a unique biomaterial. Near perfect adaptation of the cement to the tissue surfaces in a defect, and a gradual resorption followed by new bone formation are some of the distinctive advantages of CPC. In its present state CPC appears to be suitable for a number of applications. Much remains to be done to further improve its properties to meet the requirements for different applications.

Porous Polymer/Ceramic Composites for Luminescence-Based Temperature and Pressure Measurement

Abstract: Porous Polymer/ceramic films were processed via tape casting. Upon doping with luminescent molecules such as platinum(II) octaethylporphine and [Ru(4,7-diphenyl-1,10-phenanthroline)3]C12, the films were used as pressure sensors, yielding a Stern-Volmer constant of A ranging from 0.02 to 0.61. These films also exhibited very fast response times (∼I ms). Tape cast films doped with Rhodamine B were used as temperature sensors under cryogenic conditions. The temperature sensitivity of the doped films increased with increasing Rhodamine B concentration.

Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers

Abstract: The time-dependent dielectric breakdown of MOS capacitors with ultra-thin gate oxide layers is investigated. After the occurrence of soft breakdown, the gate current increases by 3 to 4 orders of magnitudes and behaves like a power law of the applied gate voltage. It is shown that this behavior can be explained by assuming that a percolation path is formed between the electron traps generated in the gate oxide layer during electrical stress of the capacitors. The time dependence of the gate voltage signal after soft breakdown is next analysed. It is shown that the fluctuations in the gate voltage are non-gaussian as well as that long-range correlations exist in the system after soft breakdown. These results can be explained by a dynamic percolation model, taking into account the trapping-detrapping of charges within the percolation cluster formed at soft breakdown.

Electrostrictive Graft Elastomers and Applications

Abstract: Efficient actuators that are lightweight, high performance and compact are needed to support telerobotic requirements for future NASA missions. In this work, we present a new class of electromechanically active polymers that can potentially be used as actuators to meet many NASA needs. The materials are graft elastomers that offer high strain under an applied electric field. Due to its higher mechanical modulus, this elastomer also has a higher strain energy density as compared to previously reported electrostrictive polyurethane elastomers. The dielectric, mechanical and electromechanical properties of this new electrostrictive elastomer have been studied as a function of temperature and frequency. Combined with structural analysis using x-ray diffraction and differential scanning calorimetry on the new elastomer, structure-property interrelationship and mechanisms of the electric field induced strain in the graft elastomer have also been investigated. This electroactive polymer (EAP) has demonstrated high actuation strain and high mechanical energy density. The combination of these properties with its tailorable molecular composition and excellent processability makes it attractive for a variety of actuation tasks. The experimental results and applications will be presented.

Medium-Range Order in a-Si:H Below and Above the Onset of Microcrystallinity

Abstract: Medium range order (MRO) and the formation of microcrystallites in a-Si:H prepared by plasma-enhanced chemical vapor deposition (PECVD) and hot-wire chemical vapor deposition (HWCVD) have been probed by systematic x-ray diffraction studies with films as thin as those used in solar cells. Effects of substrate temperature, hydrogen dilution, film thickness, and type of substrate have been examined. High-hydrogen-diluted films of 0.5 μm thickness, using optimized deposition parameters for solar cell efficiency and stability, are found to be partially microcrystalline (μc) if deposited directly on stainless steel (SS) substrates but are fully amorphous provided a thin (20 nm) n-layer of a-Si:H or μc-Si:H is first deposited on the SS. The latter predeposition does not prevent partially microcrystallinity if the films are grown thicker (1.5 to 2.5 μm) and this is consistent with a recently proposed phase diagram of thickness versus hydrogen dilution. Analysis of the first (lowest angle) scattering peak of the a-Si:H phase demonstrates that its width, directly related to MRO, is reduced by heavier hydrogen dilution in PECVD growth or by increased substrate temperature in HWCVD growth. The narrowest width of fully amorphous material correlates with better solar cell stability and this is not likely related to bonded hydrogen content since it is quite different in the optimized PECVD and HWCVD a-Si:H. A wide range of MRO apparently exists in the residual amorphous phase of the mixed a/μc material.

Suppression of Stiction in MEMS

Abstract: Stiction failures in microelectromechanical systems (MEMS) occur when suspended elastic members are unexpectedly pinned to their substrates. This type of device failure develops both in fabrication and during device operation, being a dominant source of yield loss in MEMS. Stiction failures require first a collapse force that brings the elastic member contact with the substrate followed by an intersolid adhesion sufficiently large to overcome the elastic restoring force. Stiction failure mechanisms have been studied extensively elsewhere [1]. This paper briefly summarizes these mechanisms in a the practical way. Over the last decade, stiction failure rates in MEMS have been minimized using a wide variety of processing, surface treatment, and physical schemes. An update of these methods is provided.

Low Dielectric Constant Sicoh Films As Potential Candidates for Interconnect Dielectrics

Abstract: The quest to improve the high performance in ULSI circuits, is driving the search for new materials with low dielectric constants (k=2.5-3.0) for the back end of the line (BEOL) interconnect structures. Novel SiCOH films comprising Si, C, O and H, have been deposited by a PECVD deposition technique. The films have been characterized as-deposited and after anneals of up to 8 hours at 400°C. The atomic composition of the films has been determined by RBS and FRES analysis and their optical properties have been determined by FTIR and index of refraction measurements. The mechanical properties have been determined by measurements of stress and of crack development velocity in water. Metal insulator silicon structures have been used to test the electrical properties of the SiCOH films. After an initial stabilization anneal, the SiCOH films are thermally stable up to 400°C have low tensile stresses (<50 MPa), an extremely low crack propagation velocity, and a hydrophobic behavior. According to the deposition conditions the films have dielectric constants in the range of 2.8 to 3.5. These film properties, combined with an easy-to-integrate deposition process indicate that the material has a strong potential as an interconnect dielectric.

Advances in GaAs Mosfet's Using Ga2O3(Gd2O3) as Gate Oxide

Abstract: In this article, we review the recent progress on GaAs MOSFET's using in-situ MBE-grown Ga2O3(Gd2O3) as the gate dielectric. Both depletion-mode (D-mode) and inversion-mode (I-mode) GaAs MOSFET's with negligible drain current drift and hysteresis are demostrated. The absence of drain current drift and hysteresis indicates that the excellent stability of the oxide and low oxide/GaAs interface state density have been achieved. The drain current density and transconductance are about one order of magnitude higher than the best previous reported data in the literature for an inversion-mode GaAs MOSFET. Excellent high frequency and power performances were also measured from the depletion-mode devices. These improvements are attributed to the excellent Ga2O3(Ga2O3) oxide properties and novel processing techniques.

Spin-on Polymer Gate Dielectric for High Performance Organic Thin Film Transistors

Abstract: We have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to devices using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.

Pattern Dependent Modeling for CMP Optimization and Control

Abstract: In previous work, we have formalized the notions of “planarization length” and “planarization response function” as key parameters that characterize a given CMP consumable set and process. Once extracted through experiments using carefully designed characterization mask sets, these parameters can be used to predict polish performance in CMP for arbitrary product layouts. The methodology has proven effective at predicting oxide interlevel dielectric planarization results. In this work, we discuss extensions of layout pattern dependent CMP modeling. These improvements include integrated up and down area polish modeling; this is needed to account for both density dependent effects, and step height limits or step height perturbations on the density model. Second, we discuss applications of the model to process optimization, process control (e.g. feedback compensation of equipment drifts), and shallow trench isolation (STI) polish. Third, we propose a framework for the modeling of pattern dependent effects in copper CMP. The framework includes “removal rate diagrams” which concisely capture dishing height and step height dependencies in dual material polish processes.

Passivation of Interfaces in High-Efficiency Photovoltaic Devices

Abstract: Solar cells made from III-V materials have achieved efficiencies greater than 30%. Effectively ideal passivation plays an important role in achieving these high efficiencies. Standard modeling techniques are applied to Ga0.5In0.5P solar cells to show the effects of passivation. Accurate knowledge of the absorption coefficient is essential (see appendix). Although ultralow (<2 cm/s) interface recombination velocities have been reported, in practice, it is difficult to achieve such low recombination velocities in solar cells because the doping levels are high and because of accidental incorporation of impurities and dopant diffusion. Examples are given of how dopant diffusion can both help and hinder interface passivation, and of how incorporation of oxygen or hydrogen can cause problems.

α-Radiolysis and α-Radiation Damage Effects on uo2 Dissolution Under Spent Fuel Storage Conditions

Abstract: α-decay will constitute almost entirely the radiation field in and around spent nuclear fuel after a few hundred years in a geological repository. Pellets of UO2 containing ˜0.1 and ˜10 wt. % 238Pu were fabricated using a sol-gel method and characterized, comparing their properties to those of undoped UO2. The α-radiation fields of different types of commercial LWR spent fuel are of the same order of magnitude as the fuel with the lower Pu-concentration used in this work. The results of static batch leaching tests at room temperature in demineralized water under anoxic atmosphere showed that the amounts of U released during leaching were higher in the case of UO2 containing 238pu than for undoped UO2. Relatively large amounts of Pu were released after the longest leaching times. Lattice parameter measurements using XRD and hardness measurements by Vickers indentation showed a relatively rapid build-up of α-decay damage in the material stored at ambient temperature with the higher concentration of dopant, while for the material with ˜0.1 wt. % Pu no clear variations were detected during the same time intervals.

Controlled Assembly of Monodisperse ε-Cobalt-Based Nanocrystals

Abstract: General synthetic routes to monodisperse c-cobalt (β-Mn type phase) nanocrystals (e-Co) and controlled assembly of these nanocrystals are presented in this paper. The e-Co particles are obtained by superhydride reduction of cobalt chloride (anhydrous or hexahydrate) in a high temperature solution phase (200°C) in the presence of a combination of long chain diol, oleic acid and trialkylphosphine. Monodisperse nanocrystals are isolated by size selective precipitation. As synthesized cobalt particles are each a single crystal with a complex cubic structure related to the beta phase of elemental manganese (β-Mn). Self-assembly of these uniform cobalt particles on solid substrates is induced by evaporation of the carrier solvent producing 2-D and 3-D magnetic superlattices. Annealing of assembled e-Co nanocrystal arrays converts them to the hcp cobalt crystal arrays. The inter-particle distance can be adjusted by selected thermal treatments or by chemical ligand exchange. This control over particle dimensions, crystallinity and assembly offers a model system for the study of ultra-high density recording media.

Zero Hysteresis in Shape-Memory TI-NI-X Films (X = CU, PD) Under Constraint

Abstract: The hysteresis of thin film shape memory actuators affects the frequency of actuators switching between martensite and austenite. Therefore the hysteresis properties of thin films of TiNi, Ti(Ni,Cu) and Ti(NiPd) deposited onto metallic substrates by DC-Magnetron sputtering have been investigated. The substrates have different expansion coefficients to establish biaxial tensile and compressive film stresses, respectively. The results show, that the hysteresis width is significantly affected by the stress state of the shape memory film and in principal depends on the temperature range of measurement. In contrast, the difference Af-Mf remains unchanged. In some alloys zero hysteresis width could be obtained.

Fundamental and technological aspects of actinide oxide pyrochlores: Relevance for immobilization matrices

Abstract: Polycrystalline pyrochlore oxides consisting of selected f elements (lanthanides and actinides) and Zr and Hf have been prepared and characterized. Characterization to date has been primarily by X-ray diffraction, both at room and at elevated temperatures. Initial studies concentrated on selected lanthanides and the Np, Pu and Am analogs (reported here) but have been extended to the other actinide elements through Cf. Data from these studies have been used to establish a systematic correlation regarding the fundamental materials science of these particular pyrochlores and structurally related fluorite-type dioxides. In addition to pursuing their materials science, we have addressed some potential technological applications for these materials. Some of the latter concern: (1) immobilization matrices; (2) materials for transmutation concepts; and (3) special nuclear fuel forms that can minimize the generation of nuclear wastes. For f elements that display both a III and IV oxidation state in oxide matrices, the synthetic path required for producing the desired pyrochlore oxide is dictated by their pseudo-oxidation potential the stability of the compound towards oxygen uptake. For the f elements that display an oxidationreduction cycle for pyrochlore-dioxide solid solution, X-ray diffraction can be used to identify the composition in the oxidation-reduction cycle, the oxygen stoichiometry and/or the composition. This paper concentrates on the Np, Pu and Am systems, and addresses the above aspects, the role of the crystal matrix in controlling the ceramic products as well as discussingsome custom-tailored materials.

Low Temperature Deposition of Amorphous Silicon Based Solar Cells

Abstract: Our investigations study the influence of various deposition parameters on the structural and optoelectronic properties of a-Si:H deposited at temperatures of 100 °C and below. Despite a significant material quality deterioration at low substrate temperatures, we observe remarkable improvements of charge carrier transport properties due to an increased H2-dilution of the process gases. In case of doped layers, we restore the electrical conductivity of low temperature n-type a-Si:H to standard values, whereas the p-layer quality is still inferior. We incorporate our optimized low temperature layers into a variety of solar cell types, including single and tandem cell structures. In addition to our conventional pin-structures we also successfully develop nip-cells for growth on opaque polymer substrates. From pinpin tandem cells, we record initial efficiencies of 6.0 % at a deposition temperature of 100 °C and 3.8 % at 75 °C. Interestingly, our nipnip tandem structures attain similar values which offers the possibility for deposition on low-cost plastic substrates. The mechanical flexibility of such substrates offers a wide variety of novel applications.

Highly Reliable Thin Hafnium Oxide Gate Dielectric

Abstract: HfO2 is the one of the potential high-k dielectrics for replacing SiO2 as a gate dielectric. HfO2 is thermodynamically stable when in direct contact with Si and has a reasonable band gap (~5.65eV). In this study, MOS capacitors (Pt/HfO2/Si) were fabricated by depositing HfO2 using reactive DC magnetron sputtering in the range of 33-135A followed by Pt deposition. During the HfO2 deposition, O2 flow was modulated to control interface quality and to suppress interfacial layer growing. By optimizing the HfO2 deposition process, equivalent oxide thickness (EOT) can be reduced down to ~11.2 A with the leakage current as low as 1×10−2 A/cm2 at + 1.0V and negligible frequency dispersion. HfO2 films also show excellent breakdown characteristics and negligible hysteresis after high temperature annealing. From the high resolution TEM, there is a thin interfacial layer after annealing, suggesting a composite of Si-Hf-O with a dielectric constant of ≈ 2 X K SiO2.

Fabrication and Field Emission Properties of Carbon Nanotube Cathodes

Abstract: A variety of carbon nanotube films have been fabricated and tested as cold cathodes. A spray deposition technique was developed for processing as-grown bulk nanotubes, both single-walled and multi-walled, into films of randomly oriented nanotubes. Films of randomly oriented multi-walled nanotubes were grown using thermal chemical vapor deposition, and arrays of well-aligned multi-walled nanotubes have been fabricated using a microwave plasma enhanced chemical vapor deposition technique. The emission current-voltage (I-V) characteristics of these nanotube cathodes have been measured. Both multi-walled (random and aligned) and single-walled carbon nanotubes exhibit low turn-on fields (~ 2 V/μm to generate 1 nA) and threshold fields ( 1A/cm2), making them candidates for application in a variety of vacuum microelectronic devices.

Measurement of Residual Stresses by Load and Depth Sensing Spherical Indentation

Abstract: The finite element method was used to determine whether load and depth sensing indentation with spherical indenters may be useful in the measurement of residual stresses in materials. The spherical indentation process for a wide range of elastic/ideal-plastic materials to which compressive and tensile biaxial stresses were applied was simulated using standard finite element techniques. The elastic moduli and yield stresses of the materials were varied systematically to model the behavior of a wide variety of metals and ceramics. Elastic-ideal-plastic materials were considered in the study with residual stress levels varied from zero up to the yield stress. All three indentation regimes - elastic, elastic-plastic, and plastic - were examined, with emphasis given to the elastic and the early part of the elastic-plastic regimes, where differences in the load-displacement characteristics caused by residual stress were found to have a significant effect. Systematic examination of the relationships among residual stress, contact pressure, and elastic recovery revealed a simple, measurable indentation parameter which correlates well with the residual stress. Using this parameter, an experimental technique is proposed by which residual stresses can be estimated from measurements of the load of an indentation in the elastic-plastic regime, the yield stress, and the elastic modulus of the material, all of which can be determined by load and depth sensing indentation methods. Based on a critical examination of the technique by finite element simulation, the technique appears promising.

Annealing of Ion Implantation Damage in SiC Using a Graphite Mask

Abstract: For p-type ion implanted SiC, temperatures in excess of 1600 °C are required to activate the dopant atoms and to reduce the crystal damage inherent in the implantation process. At these high temperatures, however, macrosteps (periodic welts) develop on the SiC surface. In this work, we investigate the use of a graphite mask as an anneal cap to eliminate the formation of macrosteps. N-type 4H- and 6H-SiC epilayers, both ion implanted with low energy (keV) Boron (B) schedules at 600 °C, and 6H-SiC substrates, ion implanted with Aluminum (Al), were annealed using a Graphite mask as a cap. The anneals were done at 1660 °C for 20 and 40 minutes. Atomic force microscopy (AFM), capacitance-voltage (C-V) and secondary ion mass spectrometry (SIMS) measurements were then taken to investigate the effects of the anneal on the surface morphology and the substitutional activation of the samples. It is shown that, by using the Graphite cap for the 1660 °C anneals, neither polytype developed macrosteps for any of the dopant elements or anneal times. The substitutional activation of Boron in 6H-SiC was about 15%.

Synthesis of Single Crystal Bismuth-Telluride and Lead-Telluride Nanowires for New Thermoelectric Materials

Abstract: Dimensionality can play an important role in determining the properties of materials. In the case of thermoelectric materials, it has been proposed that one-dimensional quantum wires, or nanowires, and two-dimensional superlattices could exhibit substantially higher efficiencies compared to the corresponding bulk, three-dimensional solids. To explore such predictions we have initiated a program directed towards the controlled growth of nanowires, and herein, we report the synthesis of single crystal Bi2Te3 and PbTe nanowires by a pulsed laser ablation method. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that Bi2Te3 wires 80 nm to 200 nm in diameter and lengths exceeding 10 microns, and PbTe wires 25 nm to 60 nm in diameter and lengths to 2 microns can be readily produced by the laser ablation method. High-resolution TEM and electron diffraction show that Bi2Te3 nanowires are single crystals with wire axes along the crystal direction. TEM and electron diffraction measurements also show that the PbTe nanowires are single crystals with a growth axis. The transport properties of these new nanowire materials will be discussed.

Strain and Texture in Al-Interconnect Wires Measured by X-Ray Microbeam Diffraction

Abstract: The local strain and texture in Al interconnect wires have been investigated using white and monochromatic x-ray microbeams on the MHATTCAT undulator beam line at the Advanced Photon Source. Intergrain and intragrain orientations were obtained with ~0.01 degree sensitivity using white beam measurements on wide Al pads (~100 Mu-m) and thin (2 Mu-m) Al wires. Orientation changes of up to 1 degree were found within individual grains of the (111) textured Al interconnects. Deviatoric strain measurements indicate small intragranular strain variations, but intergranular strain variations were found to be quite large.

Ultra-High Strain Response of Elastomeric Polymer Dielectrics

Abstract: The strain response of dielectric elastomers sandwiched between compliant electrodes was studied. These electroactive polymer artificial muscle (EPAM) materials show excellent overall performance and appear more attractive than many competing actuator technologies. Based on the available data, the actuation mechanism is due to the free charge interaction of the compliant electrodes, enhanced by the dielectric properties of the elastomer (Maxwell stress). Strains over 200%, actuation pressures up to 8 MPa, and energy densities up to 3.4 J/cm3 have been demonstrated with silicone rubber and acrylic elastomers. Response time is rapid, and the potential efficiency is high. The fabrication of EPAM actuators can be simple and low cost. A wide range of small devices have been made, to demonstrate the potential of the technology and reveal more about performance and fabrication issues. These devices include bending beam actuators for scanners and clamps, diaphragm actuators for pumps and valves, stretched-film actuators for electro-optics, and bow actuators for muscle-like actuators for small robots and other micro machines.

Molecular Scale Electronics

Abstract: This paper reports on some of the recent advances in the development and testing of molecular-scale electronic devices, devices that may ultimately be the basis of a molecular-based computer. These advances include: the synthesis of molecules which will perform specific electronic functions, self-assembled monolayer formation of rigid-rod conjugated oligomers, novel methodologies for the design and testing of molecular electronic devices, and the observance of negative differential resistance (NDR) through a molecule.

Orientation and Composition Dependence of Piezoelectric-Dielectric Properties of Sputtered Pb(Zrx,Ti1−x)O3 Thin Films

Abstract: In-situ, reactively sputter deposited 300 nm thick Pb(Zrx,Ti1-x)O3 films on Pt/Si based substrates are investigated as a function of composition and texture. (111) PZT is grown on a (111) oriented Pt bottom electrode covered with a very thin TiO2 film. Highly {100} oriented PZT is grown on Pt (111) by means of a 10 nm thick PbTiO3 seed layer. Pronounced deviations from known bulk PZT behavior are observed for the (111) texture. Maximum of d33 and e are shifted to 40/60 and 45/55 compositions, respectively. (100) textured films exhibit a higher d33. 1.3 μm (100) thick films attain the predicted d33 value of clamped bulk ceramics. Coercive fields and voltage offsets increase strongly with increasing Ti content. In parallel, the as-grown polarization increases. Polarization switching is not possible for x ≤ 0.1. Post-anneals in O2 and hot poling show that oxygen vacancies play an important role in this phenomenon. Ti-rich (100) oriented films exhibit very high and stable pyroelectric and piezoelectric coefficients whithout poling treatments.

Rugged a-Si:H TFTs on Plastic Substrates

Abstract: Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors (a-Si:H TFTs) made on 25-µm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics. At R = 0.5 mm the channel area of the TFTs is strained by ~ 1%. The reduction in bending radius, from R ? 2 mm on steel foil of the same thickness, agrees with the theoretical prediction that changing from a stiff to a compliant substrate can reduce the bending strain in the device plane by a factor of up to 5.

Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition

Abstract: Heteroepitaxial ZnO films were grown on (111) surface of yttria stabilized zirconia (YSZ) and (0001) surface of sapphire by PLD method, using KrF eximer laser (248nm) in an ultra-high-vacuum chamber. ZnO grown on YSZ (111) at the substrate temperature of 800°C had an epitaxial relationship at the ZnO/YSZ interface of ZnO [1120]//YSZ [110]. Hexagonalshaped grains were observed whose surfaces were atomically flat. The grain size of ZnO increased and the Hall mobility rose toward 1400nm and 75cm2/Vs. respectively as film thickness increased from 10 nm to 800 nm.

Abrasive Effects in Oxide Chemical Mechanical Polishing

Abstract: In this study, we have characterized the effects of abrasive properties, primarily particle size, on the Chemical Mechanical Polishing (CMP) of oxide films Sol-gel silica particles with very narrow size distributions were used for preparing the polishing slurries The results indicate that as particle size increases, there is a transition in the mechanism of material removal from a surface area based mechanism to an indentation-based mechanism In addition, the surface morphology of the polished samples was characterized, with the results showing that particles larger than 05 μm are detrimental to the quality of the SiO2 surface