Justin Richardson

TL;DR: This work states that the introduction of SPAD devices in deep-submicron CMOS has enabled the design of massively parallel arrays where the entire photon detection and ToA circuitry is integrated on-pixel.

TL;DR: In this article, a single-photon avalanche diode structure implemented in a 130-nm imaging process is reported, which employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor technologies.

TL;DR: In this article, a single-photon avalanche diode structure with a p-well anode and a novel guard ring was presented for a 50-m active area with a dark count rate of 25 Hz at 20 C and a photon detection efficiency peak of 28% at 500 nm.

TL;DR: The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging, and the characterization shows the suitability of the proposed sensor technology for these applications.

TL;DR: The resulting time correlated pixel array is a viable candidate for single photon counting (TCSPC) applications such as fluorescent lifetime imaging microscopy (FLIM), nuclear or 3D imaging and permits scaling to larger array formats.