https://cyberleninka.org/article/n/247805.pdf

A brief review of atomic layer deposition: from fundamentals to applications

The fifth generation (5G) wireless communication networks are being deployed worldwide from 2020 and more capabilities are in the process of being standardized, such as mass connectivity, ultra-reliability, and guaranteed low latency. However, 5G will not meet all requirements of the future in 2030 and beyond, and sixth generation (6G) wireless communication networks are expected to provide global coverage, enhanced spectral/energy/cost efficiency, better intelligence level and security, etc. To meet these requirements, 6G networks will rely on new enabling technologies, i.e., air interface and transmission technologies and novel network architecture, such as waveform design, multiple access, channel coding schemes, multi-antenna technologies, network slicing, cell-free architecture, and cloud/fog/edge computing. Our vision on 6G is that it will have four new paradigm shifts. First, to satisfy the requirement of global coverage, 6G will not be limited to terrestrial communication networks, which will need to be complemented with non-terrestrial networks such as satellite and unmanned aerial vehicle (UAV) communication networks, thus achieving a space-air-ground-sea integrated communication network. Second, all spectra will be fully explored to further increase data rates and connection density, including the sub-6 GHz, millimeter wave (mmWave), terahertz (THz), and optical frequency bands. Third, facing the big datasets generated by the use of extremely heterogeneous networks, diverse communication scenarios, large numbers of antennas, wide bandwidths, and new service requirements, 6G networks will enable a new range of smart applications with the aid of artificial intelligence (AI) and big data technologies. Fourth, network security will have to be strengthened when developing 6G networks. This article provides a comprehensive survey of recent advances and future trends in these four aspects. Clearly, 6G with additional technical requirements beyond those of 5G will enable faster and further communications to the extent that the boundary between physical and cyber worlds disappears.

/pdf/towards-6g-wireless-communication-networks-vision-enabling-2tj7a36yux.pdf

Towards 6G wireless communication networks: vision, enabling technologies, and new paradigm shifts

A high-quality junction between graphene and metallic contacts is crucial in the creation of high-performance graphene transistors. In an ideal metal-graphene junction, the contact resistance is determined solely by the number of conduction modes in graphene. However, as yet, measurements of contact resistance have been inconsistent, and the factors that determine the contact resistance remain unclear. Here, we report that the contact resistance in a palladium-graphene junction exhibits an anomalous temperature dependence, dropping significantly as temperature decreases to a value of just 110 ± 20 Ω µm at 6 K, which is two to three times the minimum achievable resistance. Using a combination of experiment and theory we show that this behaviour results from carrier transport in graphene under the palladium contact. At low temperature, the carrier mean free path exceeds the palladium-graphene coupling length, leading to nearly ballistic transport with a transfer efficiency of ~75%. As the temperature increases, this carrier transport becomes less ballistic, resulting in a considerable reduction in efficiency.

https://researcher.watson.ibm.com/researcher/files/us-vperebe/graphene_contact.pdf

The origins and limits of metal–graphene junction resistance

By adapting a laser scanning microscope with a titanium sapphire femtosecond pulsed laser and transmission optics, we are able to produce live cell images based on the nonlinear optical phenomenon of second harmonic generation (SHG). Second harmonic imaging (SHIM) is an ideal method for probing membranes of living cells because it offers the high resolution of nonlinear optical microscopy with the potential for near-total avoidance of photobleaching and phototoxicity. The technique has been implemented on three cell lines labeled with membrane-staining dyes that have large nonlinear optical coefficients. The images can be obtained within physiologically relevant time scales. Both achiral and chiral dyes were used to compare image formation for the case of single- and double-leaflet staining, and it was found that chirality plays a significant role in the mechanism of contrast generation. It is also shown that SHIM is highly sensitive to membrane potential, with a depolarization of 25 mV resulting in an approximately twofold loss of signal intensity.

High-resolution nonlinear optical imaging of live cells by second harmonic generation

A three-dimensional imaging system which distributes the optical illumination over the full field-of-view is sought after. Here, the authors demonstrate the capability of reconstructing 128 × 128 pixel resolution three-dimensional scenes to an accuracy of 3 mm as well as real-time video with a frame-rate up to 12 Hz.

Single-pixel three-dimensional imaging with time-based depth resolution

An 8 × 16 pixel array based on CMOS small-area silicon photomultipliers (mini-SiPMs) detectors for PET applications is reported. Each pixel is 570 × 610 μm2 in size and contains four digital mini-SiPMs, for a total of 720 SPADs, resulting in a full chip fill-factor of 35.7%. For each gamma detection, the pixel provides the total detected energy and a timestamp, obtained through two 7-b counters and two 12-b 64-ps TDCs. An adder tree overlaid on top of the pixel array sums the sensor total counts at up to 100 Msamples/s, which are then used for detecting the asynchronous gamma events on-chip, while also being output in real-time. Characterization of gamma detection performance with an 3 × 3 × 5 mm3 LYSO scintillator at 20°C is reported, showing a 511-keV gamma energy resolution of 10.9% and a coincidence timing resolution of 399 ps.

A Fully Digital 8 $\,\times\,$ 16 SiPM Array for PET Applications With Per-Pixel TDCs and Real-Time Energy Output

We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

IEEE International Electron Devices Meeting (IEDM)

A 3×3 prototype image sensor array consisting of 2µm diameter CMOS avalanche photodiodes with 3-transistor NMOS pixel circuitry is integrated in a 90nm CMOS image sensor technology. The 5µm pixel pitch is the smallest achieved to date and is obtained with &#60;1% crosstalk, 250Hz mean dark count rate (DCR) at 20C, 36% photon detection efficiency at 410nm (PDE) and 107ps FWHM jitter. The small pixel pitch makes it possible to recover the 12.5% fill factor by standard wafer-level microlenses. A 5-stage capacitive charge pump generates the 11V breakdown voltage from a standard 2.5V supply obviating external high voltage generation.

A 3×3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology

We have successfully demonstrated video-rate CMOS single-photon avalanche diode (SPAD)-based cameras for fluorescence lifetime imaging microscopy (FLIM) by applying innovative FLIM algorithms. We also review and compare several time-domain techniques and solid-state FLIM systems, and adapt the proposed algorithms for massive CMOS SPAD-based arrays and hardware implementations. The theoretical error equations are derived and their performances are demonstrated on the data obtained from 0.13 μm CMOS SPAD arrays and the multiple-decay data obtained from scanning PMT systems. In vivo two photon fluorescence lifetime imaging data of FITC-albumin labeled vasculature of a P22 rat carcinosarcoma (BD9 rat window chamber) are used to test how different algorithms perform on bi-decay data. The proposed techniques are capable of producing lifetime images with enough contrast.

/pdf/time-domain-fluorescence-lifetime-imaging-techniques-cbgmr7jkm5.pdf

Richard Walker

Papers

A Fully Digital 8 $\,\times\,$ 16 SiPM Array for PET Applications With Per-Pixel TDCs and Real-Time Energy Output

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

IEEE International Electron Devices Meeting (IEDM)

A 3×3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology

Time-domain fluorescence lifetime imaging techniques suitable for solid-state imaging sensor arrays