K. Brueckner

TL;DR: In this article, fabrication, operation, and sensing properties of ceramic wide band gap (AlN and SiC) NEMS sensors are demonstrated, where the internal strain of such beams can be used to improve the resonant performance of the devices.

TL;DR: In this paper, an enhancement of the quality factor by increasing the resonant frequency using strained resonator structures is proposed, which is the result of the thermal mismatch between heteroepitaxial SiC or AlN layers and the silicon substrates.

TL;DR: In this article, the authors report on resonant MEMS and NEMS devices with functional layers of SiC, AlN and AlGaN/GaN heterostructures on different substrates, which have been investigated and analyzed in the course of an interdisciplinary research focus program of the German Research Foundation (DFG).

TL;DR: In this paper, a free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates and the two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act as back electrode for the active layer.

TL;DR: In this article, a semiconductor fabrication process has been applied to prepare resonant AlN and SiC beams operating at frequencies between 0.1 and 2.1 MHz, and the metallized beams were actuated in a permanent magnetic field of about 0.5 T by the Lorentz force.