K
K. Fritz
Researcher at Mayo Clinic
Publications - 8
Citations - 330
K. Fritz is an academic researcher from Mayo Clinic. The author has contributed to research in topics: CMOS & Burst error. The author has an hindex of 7, co-authored 8 publications receiving 314 citations.
Papers
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Journal ArticleDOI
Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
Paul W. Marshall,M.A. Carts,S. Currie,Robert A. Reed,B.A. Randall,K. Fritz,K. Kennedy,Melanie D. Berg,R. Krithivasan,C. Siedleck,Raymond L. Ladbury,Cheryl J. Marshall,John D. Cressler,Guofu Niu,Ken LaBel,Barry K. Gilbert +15 more
TL;DR: A generally applicable self test circuit approach implemented in IBM's 5AM SiGe process is demonstrated, and its ability to capture complex error signatures during circuit operation at data rates exceeding 5 Gbit/s is described.
Journal ArticleDOI
Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits
Robert A. Reed,Paul W. Marshall,J.C. Pickel,M.A. Carts,B. Fodness,Guofu Niu,K. Fritz,G. Vizkelethy,Paul E. Dodd,T.L. Irwin,John D. Cressler,R. Krithivasan,P.A. Riggs,J.F. Prairie,B.A. Randall,Barry K. Gilbert,Ken LaBel +16 more
TL;DR: In this article, a broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response.
Journal ArticleDOI
An SEU hardening approach for high-speed SiGe HBT digital logic
R. Krithivasan,Guofu Niu,John D. Cressler,S. Currie,K. Fritz,Robert A. Reed,Paul W. Marshall,P.A. Riggs,B.A. Randall,Barry K. Gilbert +9 more
TL;DR: In this article, a new circuit-level single-event upset (SEU) hardening approach for high-speed SiGe HBT current-steering digital logic is introduced and analyzed using both device and circuit simulations.
Journal ArticleDOI
A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS
Paul W. Marshall,M.A. Carts,A.B. Campbell,Raymond L. Ladbury,Robert A. Reed,Cheryl J. Marshall,S. Currie,Dale McMorrow,S. P. Buchner,C.M. Seidleck,P.A. Riggs,K. Fritz,B.A. Randall,Barry K. Gilbert +13 more
TL;DR: In this paper, the authors compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50Mb/s to 12.4 Gb/sec.
Proceedings ArticleDOI
A 20Gb/s SerDes transmitter with adjustable source impedance and 4-tap feed-forward equalization in 65nm bulk CMOS
TL;DR: The design and wafer probe test results of a 20 Gb/s Source-Series Terminated SerDes transmitter are presented, which transmits pre-emphasized data through the use of a 4-tap feed-forward equalizer.