Transformation formulas for the four noise parameters are given as a function of the four scattering parameters. For example, the influence of the lead inductances of a microwave bipolar transistor is examined, showing new significant results. The described procedure is applicable to other semiconductor devices. Most of the general formulas in Section II are believed to be new.

Changes of the four noise parameters due to general changes of linear two-port circuits

Several theoretical treatments now exist in the literature for scattering of Rayleigh waves from topograhic features which are parallel to the incident wave front. These treatments, however, are not applicable to a large class of signal‐processing devices in which the surface waves are scattered by inclined reflectors. A perturbational approach, similar to the earlier treatments but applicable to oblique incidence and to all perturbation orders, is presented. The first‐order reflection coefficient of a Rayleigh wave from an inclined groove is computed. It is shown that an angle similar to a ’’Brewster’’ angle exists for which the surface wave reflection coefficient is zero. A prescription for applying the theory to anisotropic media is suggested. A clarification of the applicability of this and prior theories to steep‐walled structures is given.

Scattering of Rayleigh waves from topographic irregularities at oblique incidence

This paper represents analytical results concerning the high-frequency limitations of FET's of junction-gate or Schottky-gate constructions. The intrinsic y parameters are calculated in closed form using the analog RC transmission line method. The bias dependence of various characteristic factors in the y parameters expressions are presented graphically. Equivalent networks including both the intrinsic and extrinsic resistance-capacitance elements are presented and used to calculate the power-gain and frequency limitations of FET's.

High-frequency limitations of abrupt-junction FET's

Gain-bandwidth limitations of broad-band single-stage microwave transistor amplifiers are related to a simple transistor circuit model, to constraints on characteristic impedance in a distributed-element equalizer, and to the line lengths of this equalizer. The gain-bandwidth performance of commensurate distributed-element equalizers is compared with the performance of a lumped-element equalizer, and four distributed-element design examples are presented, including two commensurate equalizers and two computer-optimized networks.

Gain-Bandwidth Limitations of Microwave Transistor Amplifiers

The actual technology for the production of transistors is now suitable for bipolar transistors in the 10-GHz range. In order to obtain amplifier circuits in this microwave range, the knowledge of the exact equivalent circuit is essential. A computer method for the determination of the equivalent network is given. The final application and accuracy are shown for a particular microwave transistor.

Computer-Aided Determination of the Small-Signal Equivalent Network of a Bipolar Microwave Transistor

Since it is important to know the influence of the parasitic package elements on gain and input admittance, the equivalent circuits of three stripline packages are given belonging to three microwave bipolar transistors with fmax at approximately 10 GHz.

K. Hartmann

Papers

Computer-Aided Determination of the Small-Signal Equivalent Network of a Bipolar Microwave Transistor

Equivalent networks for three different microwave bipolar transistor packages in the 2-10 GHz range

Contributors, Feb. 1972