Journal ArticleDOI
Exciton localization and the Stokes’ shift in InGaN epilayers
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TLDR
In this paper, the authors report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers.Abstract:
We report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers A working definition of the form of the absorption edge for alloys is proposed, which allows a unique definition of the Stokes’ shift A linear dependence of the Stokes’ shift on the emission peak energy is then demonstrated for InGaN using experimental spectra of both diode and epilayer samples, supplemented by data from the literature In addition, the broadening of the absorption edge is shown to increase as the emission peak energy decreases These results are discussed in terms of the localization of excitons at highly indium-rich quantum dots within a phase-segregated alloyread more
Citations
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Journal ArticleDOI
Small band gap bowing in In1−xGaxN alloys
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff +6 more
TL;DR: In this paper, the fundamental band gap for InN is shown to be near 0.8 eV and the band gap increases with increasing Ga content, which is well fit with a bowing parameter of ∼1.4 eV.
Journal ArticleDOI
Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1−xMgxO(0⩽x⩽0.49) thin films
TL;DR: In this paper, high quality Zn1−xMgxO(0.49) thin films were epitaxially grown at 500-650°C on Al2O3(00⋅1) substrates using metalorganic vapor-phase epitaxy.
Journal ArticleDOI
InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
Fong Kwong Yam,Zainuriah Hassan +1 more
TL;DR: In this paper, the fundamental properties of InGaN materials, such as optical, structural, and electrical properties, are reviewed, and the erroneous measurements of the indium composition by using X-ray diffraction (XRD) are also described.
Journal ArticleDOI
Efficient and High-Color-Purity Light-Emitting Diodes Based on In Situ Grown Films of CsPbX3 (X = Br, I) Nanoplates with Controlled Thicknesses.
Junjie Si,Yang Liu,Zhuofei He,Hui Du,Kai Du,Dong Chen,Jing Li,Mengmeng Xu,He Tian,Haiping He,Dawei Di,Changqing Lin,Yingchun Cheng,Jianpu Wang,Yizheng Jin +14 more
TL;DR: A facile solution-based approach to the in situ growth of perovskite films consisting of monolayers of CsPbBr3 nanoplates passivated by bulky phenylbutylammonium cations is reported, resulting in high-color-purity green light-emitting diodes (LEDs) with remarkably high external quantum efficiencies (EQEs) of up to 10.4%.
Journal ArticleDOI
Microstructures produced during the epitaxial growth of InGaN alloys
TL;DR: In this paper, the authors considered a set of physical phenomena occurring during epitaxial growth, including coupling that exists between the various effects, and concluded that several separate mechanisms exist for phase separation.
References
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Book
The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.
Journal ArticleDOI
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
John F. Muth,Jae-Hoon Lee,I. K. Shmagin,R. M. Kolbas,H. C. Casey,Bernd Keller,Umesh K. Mishra,Steven P. DenBaars +7 more
TL;DR: In this paper, the absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room temperature.
Journal ArticleDOI
Luminescences from localized states in InGaN epilayers
TL;DR: In this article, the authors measured the optical spectra of the bulk three-dimensional InGaN alloys using commercially available light-emitting diode devices and their wafers.
Journal ArticleDOI
Optical properties of Si-doped GaN
TL;DR: In this paper, the optical properties of n-type GaN were investigated for Si doping concentrations ranging from 5×1016 to 7×1018 cm−3, and the photoluminescence linewidth of the near-band gap optical transition increases from 47 to 78 meV as the doping concentration is increased.