K
Kacey Meaker
Researcher at University of California, Berkeley
Publications - 4
Citations - 1419
Kacey Meaker is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Graphene & Molecular orbital. The author has an hindex of 3, co-authored 4 publications receiving 1305 citations.
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Journal ArticleDOI
Strain-Induced Pseudo–Magnetic Fields Greater Than 300 Tesla in Graphene Nanobubbles
Niv Levy,Sarah A. Burke,Kacey Meaker,Melissa Panlasigui,Alex Zettl,Alex Zettl,Francisco Guinea,A. H. Castro Neto,Michael F. Crommie,Michael F. Crommie +9 more
TL;DR: Experimental spectroscopic measurements by scanning tunneling microscopy of highly strained nanobubbles that form when graphene is grown on a platinum surface open the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called “strain engineering.”
Journal ArticleDOI
Imaging and tuning molecular levels at the surface of a gated graphene device.
Alexander Riss,Sebastian Wickenburg,Liang Z. Tan,Hsin-Zon Tsai,Youngkyou Kim,Jiong Lu,Aaron J. Bradley,Miguel M. Ugeda,Kacey Meaker,Kenji Watanabe,Takashi Taniguchi,Alex Zettl,Felix R. Fischer,Steven G. Louie,Michael F. Crommie +14 more
TL;DR: Scanning tunneling microscopy and spectroscopy are used to show how the vibronic electronic levels of 1,3,5-tris(2,2-dicyanovinyl)benzene molecules adsorbed onto a graphene/BN/SiO2 device can be tuned via application of a backgate voltage.
Journal ArticleDOI
Preventing Thin Film Dewetting via Graphene Capping.
Peigen Cao,Peter Bai,Peter Bai,Arash A. Omrani,Yihan Xiao,Yihan Xiao,Kacey Meaker,Hsin-Zon Tsai,Aiming Yan,Han Sae Jung,Ramin Khajeh,Griffin Rodgers,Youngkyou Kim,Andrew S. Aikawa,Mattew A. Kolaczkowski,Yi Liu,Alex Zettl,Alex Zettl,Ke Xu,Michael F. Crommie,Michael F. Crommie,Ting Xu,Ting Xu +22 more
TL;DR: The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties.