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Design Of Analog Cmos Integrated Circuits

Reactive matching is extended to wide bandwidths using the impedance property of LC-ladder filters. In this paper, we present a systematic method to design wideband low-noise amplifiers. An SiGe amplifier with on-chip matching network spanning 3-10 GHz delivers 21-dB peak gain, 2.5-dB noise figure, and -1-dBm input IP3 at 5 GHz, with a 10-mA bias current.

A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network

This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

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RF power harvesting: a review on designing methodologies and applications

This letter presents an Exponential Slot Edge Antipodal Vivaldi Antenna (ESE-AVA), with improved radiative features as compared to the conventional Antipodal Vivaldi Antenna (AVA) design. It extends the low-end bandwidth limitation, mitigates the side and back lobe levels, corrects squint effect, and increases its main lobe gain. In order to confirm those features, a comparative study among the ESE-AVA, the low directivity conventional AVA and two popular modifications, regular slot edge (RSE) and the tapered slot edge (TSE) AVA is performed. A comparison between AVA and the proposed ESE-AVA at 6 GHz shows an improved gain of 8.3 dB, $-$ 15.5 dB of Side Lobe Level (SLL), and 0 degrees of main lobe squint (MLS), in contrast with 5 dB of gain, $ - 5~\hbox{dB}$ of SLL, and 5 degrees of MLS in the conventional AVA. By comparing the ESE-AVA with RSE-AVA and TSE-AVA, it was observed that its notches in exponential shape, similar to open the main radiator, besides mitigating the SLL also directs the E-fields distributions towards the main lobe. It reflects into a main lobe gain improvement.

A Palm Tree Antipodal Vivaldi Antenna With Exponential Slot Edge for Improved Radiation Pattern

This paper presents an adaptive RF-DC power converter designed to efficiently convert RF signals to DC voltages utilizing auxiliary transistors to control the threshold voltage of the transistors in the main rectifier chain dynamically. The proposed circuit passively reduces the threshold voltage of the forward-biased transistors to increase the harvested power and the output voltage and increases the threshold voltage of the reverse-biased transistors to reduce the leakage current to prevent the loss of previously stored energy. A 12-stage adaptive threshold-compensated rectifier is designed and implemented in IBM's 0.13 $\mu{\rm m}$ CMOS technology. The proposed rectifier exhibits measured maximum power conversion efficiency (PCE) of 32% at $-$ 15 dBm (32 $\mu{\rm W}$ ) of input power while delivering 3.2 V to a 1 M $\Omega$ load. At a remarkably low input power of $-$ 20.5 dBm (8.9 $\mu{\rm W}$ ) for a 1 M $\Omega$ load, the rectifier produces an output voltage of 1 V.

A 3.2 V –15 dBm Adaptive Threshold-Voltage Compensated RF Energy Harvester in 130 nm CMOS

This paper presents a 324-element 2-D broadside array for radio astronomy instrumentation which is sensitive to two mutually orthogonal polarizations. The array is composed of cruciform units consisting of a group of four Vivaldi antennas arranged in a cross-shaped structure. The Vivaldi antenna used in this array exhibits a radiation intensity characteristic with a symmetrical main beam of 87.5° at 3 GHz and 44.2° at 6 GHz. The measured maximum side/backlobe level is 10.3 dB below the main beam level. The array can operate at a high frequency of 5.4 GHz without the formation of grating lobes.

A 324-Element Vivaldi Antenna Array for Radio Astronomy Instrumentation

This paper presents a hybrid forward and backward threshold voltage compensated radio-frequency to direct current (RF-to-DC) power conversion circuit for RF energy harvesting applications. The proposed circuit uses standard p-channel metal-oxide semiconductor transistors in all the stages except for the first few stages to allow individual body biasing eliminating the need for triple-well technology in the previously reported forward compensation schemes. Two different RF-DC power conversion circuits, one optimized to provide high power conversion efficiency (PCE) and the other to produce a large output DC voltage harvested from extremely low input power levels, are designed and fabricated in IBM's 0.13 μm complementary metal-oxide-semiconductor technology. The first circuit exhibits a measured maximum PCE of 22.6% at -16.8 dBm (20.9 μW) and produces 1 V across a 1 MΩ load from a remarkably low input power level of -21.6 dBm (6.9 μW) while the latter circuit produces 2.8 V across a 1 MΩ load from a peak-to-peak input voltage of 170 mV achieving a voltage multiplication ratio of 17. Also, design strategies are developed to enhance the output DC voltage and to optimize the PCE of threshold voltage compensated voltage multiplier.

Hybrid Forward and Backward Threshold-Compensated RF-DC Power Converter for RF Energy Harvesting

To employ the distributed amplification technique for the design of ultra-wide-band low-noise amplifiers, the poor noise performance of the conventional distributed amplifiers (DAs) needs to be improved. In this work, the terminating resistor of the gate transmission line, a main contributor to the overall DA's noise figure, is replaced with a resistive-inductive network. The proposed terminating network creates an intentional mismatch to reduce the noise contribution of the terminating network. The degraded input matching at low frequencies can be tolerated for ultra-wide-band applications as they need to operate above 3 GHz. Implemented in a 0.13 mum CMOS process, the proposed DA achieves a flat gain of 12 dB with an average noise figure of 3.3 dB over the 3- to 9.4-GHz band, the best reported noise performance for a CMOS DA in the literature. The amplifier dissipates 30 mW from two 0.6-V and 1-V dc power supplies.

A Low-Noise CMOS Distributed Amplifier for Ultra-Wide-Band Applications

This paper presents a new high-gain structure for the distributed amplifier. Negative capacitance cells are exploited to ameliorate the loading effects of parasitic capacitors of gain cells in order to improve the gain of the distributed amplifier while keeping the desired bandwidth. In addition, the negative capacitance circuit creates a negative resistance that can be used to increase the amplifier bandwidth. Implemented in 0.13-μm IBM's CMRF8SF CMOS, the proposed six-stage distributed amplifier presents an average gain of 13.2 dB over a bandwidth of 29.4 GHz. The measured input return loss is less than -9 dB and the output return loss is less than -9.5 dB over the entire bandwidth. With a chip area of 1.5 mm × 0.8 mm, the amplifier consumes 136 mW from a 1.5-V dc power supply.

Kambiz Moez

Papers

A 3.2 V –15 dBm Adaptive Threshold-Voltage Compensated RF Energy Harvester in 130 nm CMOS

A 324-Element Vivaldi Antenna Array for Radio Astronomy Instrumentation

Hybrid Forward and Backward Threshold-Compensated RF-DC Power Converter for RF Energy Harvesting

A Low-Noise CMOS Distributed Amplifier for Ultra-Wide-Band Applications

Gain-Enhanced Distributed Amplifier Using Negative Capacitance