There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Phd by thesis

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Data Reduction And Error Analysis For The Physical Sciences

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Electronic Transport In Mesoscopic Systems

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

/pdf/scaling-of-phemts-to-decanano-dimensions-1ar2lqy22m.pdf

Scaling of pHEMTs to Decanano Dimensions

The effect of interface roughness in ballistic Si nanowires is investigated using a full 3D non-equilibrium Green's Functions formalism. The current density, the electron density and the transmission function are calculated for nanowires with different interface roughness configurations. Interface roughness is randomly generated using an exponential autocorrelation function. The interface roughness profile in nanowires with 2 nm diameter and 6 nm length is reflected in the current density landscape showing macroscopic 3D patterns. These macroscopic patterns affect the transmission probability causing resonances coming from the constrictions in the channel. The shape of the electron density in cross-sections along the wire follows the distortion of electron transversal wave function.

A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

The ability to control the properties of electrical contacts to nanostructures is essential to realize operational nanodevices Here, we show that the electrical behavior of the nanocontacts between free-standing ZnO nanowires and the catalytic Au particle used for their growth can switch from Schottky to Ohmic depending on the size of the Au particles in relation to the cross-sectional width of the ZnO nanowires We observe a distinct Schottky to Ohmic transition in transport behavior at an Au to nanowire diameter ratio of 06 The current−voltage electrical measurements performed with a multiprobe instrument are explained using 3-D self-consistent electrostatic and transport simulations revealing that tunneling at the contact edge is the dominant carrier transport mechanism for these nanoscale contacts The results are applicable to other nanowire materials such as Si, GaAs, and InAs when the effects of surface charge and contact size are considered

Controlling the Electrical Transport Properties of Nanocontacts to

The performance potential of n-type implant free In0.25Ga0.75As MOSFETs with high-κ dielectric is investigated using ensemble Monte Carlo device simulations. The implant free MOSFET concept takes advantage of the high mobility in III-V materials to allow operation at very high speed and low power. A 100 nm gate length implant free In0.25Ga0.75As MOSFET with a layer structure derived from heterojunction transistors may deliver a drive current of 1800 A/m and transconductance up to 1342 mS/mm. This implant free transistor is then scaled in the both lateral and vertical dimensions to gate lengths of 70 and 50 nm. The scaled devices exhibit continuous improvement in the drive current up to 2600 A/m and 3259 A/m and transconductance of 2076 mS/mm and 3192 mS/mm, respectively. This demonstrates the excellent scaling potential of the implant free MOSFET concept.

https://iopscience.iop.org/article/10.1088/1742-6596/38/1/048/pdf

Monte Carlo Simulation of Implant Free InGaAs MOSFET

Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic contacts has been observed. Synchrotron radiation-based high-resolution X-ray diffraction technique combined with drift–diffusion simulations show that strain reduction at the vicinity of ohmic contacts increases electric field at these locations, resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short- and long-channel gateless devices.

/pdf/strain-reduction-induced-rise-in-channel-temperature-at-1xpygnh2uz.pdf

Karol Kalna

Papers

Scaling of pHEMTs to Decanano Dimensions

A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Controlling the Electrical Transport Properties of Nanocontacts to

Monte Carlo Simulation of Implant Free InGaAs MOSFET

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs