Karol Kalna

TL;DR: In this article, changes are made to equations (21-24), (26), (27) and (30) as detailed in the accompanying PDF file, as well as the corresponding equations.

TL;DR: In this article, thickness-dependent electron effective masses have been used to simulate I D-VG characteristics of scaled, sub-10 nm double-gate (DG) MOSFETs and compare them with the results obtained using bulk masses.

TL;DR: In this article, the impact of the metal grain granularity (MGG) variations on subthreshold and ON-current of a 22-nm gate length Si gate-all-around (GAA) nanowire (NW) field effect transistor (FET) is analyzed by assessing five figures of merit: threshold voltage ( ${V}_{T}$ ), OFF-current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ), sub-threshold slope (SS) and drain-induced-barrier-lowering at low ({V

TL;DR: It is demonstrated, via validation to experimental data for TiN and Ru, that the grains that appear in the metal gate-stacks of nanoscale CMOS devices can be characterized via a two-parameter Gamma distribution.

TL;DR: In this paper, the authors compared the 3D nonequilibrium Green's functions (NEGF) and 3D finite element Monte Carlo (MC) simulations with 2-D Schrodinger-based quantum corrections.