A
Antonio Martinez
Researcher at Swansea University
Publications - 102
Citations - 1215
Antonio Martinez is an academic researcher from Swansea University. The author has contributed to research in topics: Nanowire & MOSFET. The author has an hindex of 17, co-authored 101 publications receiving 1152 citations. Previous affiliations of Antonio Martinez include University of Glasgow.
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Journal ArticleDOI
A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs
Antonio Martinez,Marc Bescond,John R. Barker,A. Svizhenko,M. P. Anantram,Campbell Millar,Asen Asenov +6 more
TL;DR: In this article, a 3D real-space quantum-transport simulator based on the Green's function formalism developed to study nonperturbative effects in ballistic nanotransistors is presented.
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Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
TL;DR: In this article, the impact of random discrete dopants in the source/drain (S/D) leads on the current variability of a gate-all-around Si nanowire transistor was studied.
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Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors
TL;DR: In this paper, the effect of random discrete dopants on the statistical variability in gate-all-around silicon nanowire transistors has been investigated using the nonequilibrium Green's function formalism.
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Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
TL;DR: In this paper, the impact of discrete doping in junctionless gate all-around n-type silicon nanowire transistors is studied using 3-D nonequilibrium Green's functions simulations.
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Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques
Asen Asenov,Andrew R. Brown,Gareth Roy,Binjie Cheng,Craig Alexander,Craig Riddet,Urban Kovac,Antonio Martinez,Natalia Seoane,Scott Roy +9 more
TL;DR: In this paper, the authors present models and tools developed and used by the Device Modelling Group at the University of Glasgow to study statistical variability introduced by the discreteness of charge and matter in contemporary and future nano-CMOS transistors.