A
Asen Asenov
Researcher at University of Glasgow
Publications - 730
Citations - 12477
Asen Asenov is an academic researcher from University of Glasgow. The author has contributed to research in topics: MOSFET & Monte Carlo method. The author has an hindex of 48, co-authored 715 publications receiving 11772 citations. Previous affiliations of Asen Asenov include Ohio University & University of Santiago de Compostela.
Papers
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Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study
TL;DR: In this paper, a 3D simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFETs is presented.
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Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
TL;DR: In this paper, the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs was investigated.
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Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
TL;DR: In this paper, a review of the analytical and numerical simulation techniques used to study and predict intrinsic parameters fluctuations is presented, and the future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed.
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Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs
TL;DR: In this paper, the intrinsic parameter fluctuations introduced by random discrete dopants, line edge roughness (LER), and oxide-thickness variations in realistic bulk MOSFETs scaled to 25, 18, 13 and 9 nm were studied.
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Design and fabrication of memory devices based on nanoscale polyoxometalate clusters
Christoph Busche,Laia Vilà-Nadal,Jun Yan,Haralampos N. Miras,De-Liang Long,Vihar P. Georgiev,Asen Asenov,Rasmus H. Pedersen,Nikolaj Gadegaard,Muhammad M. Mirza,Douglas J. Paul,Josep M. Poblet,Leroy Cronin +12 more
TL;DR: Results show that POMs have the potential to be used as a realistic nanoscale flash memory, and suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.