Kartik Ganapathi

TL;DR: This simulation results show that while MoS(2) transistors may not be ideal for high-performance applications due to heavier electron effective mass and a lower mobility, they can be an attractive alternative for low power applications thanks to the large band gap and the excellent electrostatic integrity inherent in a two-dimensional system.

TL;DR: An epitaxial transfer method is used for the integration of ultrathin layers of single-crystal InAs on Si/SiO2 substrates, elucidating the critical role of quantum confinement in the transport properties of Ultrathin XOI layers and obtaining a high-quality InAs/dielectric interface.

TL;DR: In this article, a heterojunction vertical tunneling field effect transistor (TFET) was proposed to provide very steep sub-threshold swings and high current consumption, thereby improving the scalability of TFETs for high performance.

TL;DR: In this article, the authors show that InAs band-to-band tunneling field effect transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper sub-threshold swing as compared to conventional tunneling transistors.

TL;DR: In this paper, the authors show that InAs band-to-band tunneling field effect transistors (TFETs) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper sub-threshold swing as compared to conventional tunneling transistors.