Showing papers by "Katia March published in 2014"

Atomic configuration of nitrogen-doped single-walled carbon nanotubes.

Abstract: Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically resolved electron energy-loss spectroscopy to detect individual nitrogen dopants in single-walled carbon nanotubes and compared with first-principles calculations. We demonstrate that nitrogen doping occurs as single atoms in different bonding configurations: graphitic-like and pyrrolic-like substitutional nitrogen neighboring local lattice distortion such as Stone-Thrower-Wales defects. We also show that the largest fraction of nitrogen amount is found in poly aromatic species that are adsorbed on the surface of the nanotube walls. The stability under the electron beam of these nanotubes has been studied in two different cases of nitrogen incorporation content and configuration. These findings provide key information for the applications of these nanostructures.

Nanometric Resolved Luminescence in h-BN Flakes: Excitons and Stacking Order

Abstract: The strong excitonic emission of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual few layer flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN layers stacking order.

Excitons and stacking order in h-BN

Abstract: The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN stacking order.

Atomic Configuration of Nitrogen Doped Single-Walled Carbon Nanotubes

Abstract: Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual nitrogen dopants in single-walled carbon nanotubes and compared with first principles calculations. We demonstrate that nitrogen doping occurs as single atoms in different bonding configurations: graphitic-like and pyrrolic-like substitutional nitrogen neighbouring local lattice distortion such as Stone-Thrower-Wales defects. The stability under the electron beam of these nanotubes has been studied in two extreme cases of nitrogen incorporation content and configuration. These findings provide key information for the applications of these nanostructures.

A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures

Abstract: Group III Nitrides nanowires are well suited materials for the design of light emitting devices. The internal electric field created by spontaneaous and piezoelectric polarizations in these materials poses some difficulties, but also possible solutions, towards this goal. Here, we report on the high spatial asymmetry of the cathodoluminescence intensity across a GaN quantum well embedded in an AlN nanowire, when a 60 keV, 1 nm wide electron beam is scanned over this heterostructure. This asymmetry is remarkable between positions at different sides of the quantum well. We interpret this asymmetry as originating from the different drift directions of carriers due to the internal electric field. This interpretation is corroborated by the direct determination of the polarity with convergent beam electron diffraction. A precise knowledge of hole mobility and diffusion coefficients would allow an estimate of the electric field in the AlN segment of the nanowire.