The Al x Ga1−x As/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications Even though the basic Al x Ga1−x As/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J S Blakemore, J Appl Phys 5 3, R123 (1982)] The purpose of this review is (i) to obtain and clarify all the various material parameters of Al x Ga1−x As alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications A complete set of material parameters are considered in this review for GaAs, AlAs, and Al x Ga1−x As alloys The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs) The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic‐band structure, (7) external perturbation effects on the band‐gap energy, (8) effective mass, (9) deformation potential, (10) static and high‐frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Frohlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant, obey Vegard’s rule well Other parameters, eg, electronic‐band energy, lattice vibration (phonon) energy, Debye temperature, and impurity ionization energy, exhibit quadratic dependence upon the AlAs mole fraction However, some kinds of the material parameters, eg, lattice thermal conductivity, exhibit very strong nonlinearity with respect to x, which arises from the effects of alloy disorder It is found that the present model provides generally acceptable parameters in good agreement with the existing experimental data A detailed discussion is also given of the acceptability of such interpolated parameters from an aspect of solid‐state physics Key properties of the material parameters for use in research work and a variety of Al x Ga1−x As/GaAs device applications are also discussed in detail

GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

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Design Of Analog Cmos Integrated Circuits

and Perspectives Sophie Carenco,†,‡,§,∥,⊥ David Portehault,*,†,‡,§ Ced́ric Boissier̀e,†,‡,§ Nicolas Meźailles, and Cleḿent Sanchez*,†,‡,§ †Chimie de la Matier̀e Condenseé de Paris, UPMC Univ Paris 06, UMR 7574, Colleg̀e de France, 11 Place Marcelin Berthelot, 75231 Paris Cedex 05, France ‡Chimie de la Matier̀e Condenseé de Paris, CNRS, UMR 77574, Colleg̀e de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France Chimie de la Matier̀e Condenseé de Paris, Colleg̀e de France, 11 Place Marcellin Berthelot, 75231 Paris Cedex 05, France Laboratory Heteroelements and Coordination, Chemistry Department, Ecole Polytechnique, CNRS-UMR 7653, Palaiseau, France

Nanoscaled metal borides and phosphides: recent developments and perspectives

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

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Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

We have developed a new controllable method of selective and nonselective deposition of high quality aluminum by low‐pressure chemical vapor deposition using dimethylaluminum hydride with hydrogen. At first, silicon dioxide via holes on silicon substrate were selectively filled with aluminum by thermal decomposition. Then, adding the plasma excitation for 1 min, the aluminum film began to deposit nonselectively on the silicon dioxide as well as the selectively deposited aluminum. Silicon dioxide via holes were completely planarized by the selective and nonselective deposition. The single‐crystal structure of aluminum deposited selectively on silicon was observed with a new scanning microreflection high‐energy electron diffraction microscope.

Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition

This paper investigates a bidirectional- and multi-drop-transmission-line interconnect for on-chip high-speed networks that have big impact in chip performances. Point-to-point on-chip transmission line interconnects have been developed and demonstrated widely. The present paper applies transmission line interconnect technologies to multipoint-to-multipoint on-chip communications. We propose the novel transceiver that consists of a single differential-amplifier and serves as both a transmitter (Tx) and a receiver (Rx) for transmitting signals to multipoint. The 5-mm-long prototype interconnect with six transceivers performs 8 Gbps signaling with power dissipation of 1.2 mW per transceiver in a 90 nm Si CMOS process. Our interconnect achieves multipoint communications with small delay and high power efficiencies.

A Bidirectional- and Multi-Drop-Transmission-Line Interconnect for Multipoint-to-Multipoint On-Chip Communications

This paper presents a design of microelectromechanical systems (MEMS) accelerometers for sensing sub-1g (g = 9.8 m/s2) acceleration. The accelerometer has a high-density proof mass to suppress the Brownian noise that dominates the output noise of the sensor. The low-temperature (<400 °C) process enables to integrate the accelerometer on the sensing complementary metal-oxide semiconductor circuit by electroplating of gold; a proof mass of 1020 μm × 1020 μm in area with the thickness of 12 μm has been found to suppress the measured noise floor to 0.78 μg/Hz at 300 K, which is nearly one order of magnitude smaller than those of the conventional MEMS accelerometers made of silicon.

Design of sub-1g microelectromechanical systems accelerometersa)

A Bidirectional-and Multi-Drop-Transmission-Line Interconnect for Multipoint-to-Multipoint On-Chip Communications

A generalised method for constructing binary preferred pairs with zero-correlation duration (ZCD) of (N/2 + 1) chips is proposed. Binary sequence sets with ZCD and enlarged family sizes are generated by carrying out a chip-shift operation for the preferred pairs. The properties of the proposed sequences are effective for approximately synchronised (AS) CDMA systems.

Kazuya Masu

Papers

Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition

A Bidirectional- and Multi-Drop-Transmission-Line Interconnect for Multipoint-to-Multipoint On-Chip Communications

Design of sub-1g microelectromechanical systems accelerometersa)

A Bidirectional-and Multi-Drop-Transmission-Line Interconnect for Multipoint-to-Multipoint On-Chip Communications

New binary sequences with zero-correlation duration for approximately synchronised CDMA