Kazuyoshi Torii

TL;DR: An atomic layer deposition (ALD) apparatus capable of forming a conformal ultrathin-film layer with enhanced step coverage is described in this article, which includes an ALD reactor supporting a wafer, and a main pipe coupled with a carrier gas.

TL;DR: In this paper, a theoretical investigation of the origin of substantial threshold voltage (Vth) shifts observed in p+poly-Si gate Hf-based metal insulator semiconductor field effect transistors (MISFETs), by focusing on the effect of oxygen vacancy (VO) formation in HfO2, was made.

TL;DR: In this article, the authors investigated the most serious form of damage that occurs during the integration of Pt/PZT/Pt ferroelectric capacitors, where PZT is Pb(ZrxTi1−x)O3] is the disappearance of polarization hysteresis characteristics during the passivation process.

TL;DR: In this paper, the impact of a random telegraph noise (RTN) on a scaled-down SRAM is shown for the first time, and the impact on SRAM margin enclosed by read/write Vth curves with or without RTN is simulated.

TL;DR: In this paper, a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, is described.