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Ke-Li Han

Researcher at Dalian Institute of Chemical Physics

Publications -  492
Citations -  30389

Ke-Li Han is an academic researcher from Dalian Institute of Chemical Physics. The author has contributed to research in topics: Excited state & Potential energy surface. The author has an hindex of 82, co-authored 491 publications receiving 26199 citations. Previous affiliations of Ke-Li Han include University of Minnesota & California Institute of Technology.

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Effects of Solvent Dielectric Constant and Viscosity on Two Rotational Relaxation Paths of Excited 9-(Dicyanovinyl) Julolidine

TL;DR: A study on the two rotational relaxation paths of excited 9-(dicyanovinyl) julolidine in several solvents finds τb and τc lifetime is increased greatly with the increased solvent viscosity, and τb is more sensitive to viscosities than τc, which may be due to its larger rotational moiety.
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Exact quantum scattering study of the H plus HS reaction on a new ab initio potential energy surface (HS)-S-2 ((3)A '')

TL;DR: It was found that the initial vibrational excitation of HS enhances both abstraction and exchange processes, and a good agreement is found between QCT and TDWP reaction probabilities at the total momentum J = 0 as a function of collision energy.
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Asynchronous Photoexcited Electronic and Structural Relaxation in Lead-Free Perovskites

TL;DR: This work has discovered that the photogenerated holes quickly self-trapped at Br centers (< 10 ps), simultaneously distorting the local lattice structure, likely forming small polarons in the configuration of Vk center (Br2- dimer).
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First‐Principles Investigation of the Electronic and Conducting Properties of Oligothienoacenes and their Derivatives

TL;DR: It is shown that chemical oxidation of the thiophene ring can significantly improve the semiconductor properties of the fused oligothiophenes through a decrease of the injection barrier and an increase in the charge-transfer mobility for electrons but without lowering their hole-transfer mobilities, which suggests that it may be a promising way to convert p- type semiconductors into ambipolar or n-type semiconductor materials.