K
Keehoon Kang
Researcher at Seoul National University
Publications - 47
Citations - 1198
Keehoon Kang is an academic researcher from Seoul National University. The author has contributed to research in topics: Perovskite (structure) & Chemistry. The author has an hindex of 12, co-authored 32 publications receiving 766 citations. Previous affiliations of Keehoon Kang include Yonsei University & University of Cambridge.
Papers
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Journal ArticleDOI
2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion
Keehoon Kang,Shun Watanabe,Shun Watanabe,Shun Watanabe,Katharina Broch,Alessandro Sepe,Adam J. Brown,Iyad Nasrallah,Mark Nikolka,Zhuping Fei,Martin Heeney,Daisuke Matsumoto,Kazuhiro Marumoto,Hisaaki Tanaka,Shin-ichi Kuroda,Henning Sirringhaus +15 more
TL;DR: It is shown that in the highly ordered lamellar microstructure of a regioregular thiophene-based conjugated polymer, a small-molecule p-type dopant can be incorporated by solid state diffusion into the layers of solubilizing side chains without disrupting the conjugate layers.
Journal ArticleDOI
Polaron spin current transport in organic semiconductors
Shun Watanabe,Kazuya Ando,Kazuya Ando,Kazuya Ando,Keehoon Kang,Sebastian Mooser,Yana Vaynzof,Yana Vaynzof,Hidekazu Kurebayashi,Hidekazu Kurebayashi,Eiji Saitoh,Eiji Saitoh,Henning Sirringhaus +12 more
TL;DR: In this paper, it was shown that polarons carry pure spin currents over extended distances with long relaxation times, and uncover the role of spin-orbit coupling in this process in organic semiconductors.
Journal ArticleDOI
High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure.
Keehoon Kang,Heebeom Ahn,Younggul Song,WooCheol Lee,Junwoo Kim,Youngrok Kim,Daekyoung Yoo,Takhee Lee +7 more
TL;DR: The high-yield device fabrication based on the solution-process demonstrated here will be a step toward achieving low-cost and high-density practical perovskite memory devices.
Journal ArticleDOI
Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules.
Kyungjune Cho,Jinsu Pak,Jae Keun Kim,Keehoon Kang,Tae-Young Kim,Jiwon Shin,Barbara Yuri Choi,Seungjun Chung,Takhee Lee +8 more
TL;DR: A simple contact-engineering method is suggested, introducing chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS2 channels, improving the carrier-injection properties with lower activation energies inMoS2 field-effect transistors.
Journal ArticleDOI
Long spin diffusion lengths in doped conjugated polymers due to enhanced exchange coupling
Shu-Jen Wang,Deepak Venkateshvaran,Mohammad Reza Mahani,Uday Chopra,Erik R. McNellis,Riccardo Di Pietro,Sam Schott,Angela Wittmann,Guillaume Schweicher,M. Cubukcu,Keehoon Kang,Remington Carey,Thomas Wagner,Janis N.M. Siebrecht,Daniel P.G.H. Wong,Ian E. Jacobs,Razan Aboljadayel,Adrian M. Ionescu,Sergei A. Egorov,Sergei A. Egorov,Sergei A. Egorov,S. Mueller,Olga Zadvorna,Piotr Skalski,Cameron Jellett,Mark Little,Adam Marks,Iain McCulloch,Joerg Wunderlich,Joerg Wunderlich,Jairo Sinova,Henning Sirringhaus +31 more
TL;DR: In this paper, the authors measured spin diffusion lengths in doped conjugated polymers using a lateral spin transport device architecture, which is based on spin pumping injection and inverse spin Hall detection.