R
Riccardo Di Pietro
Researcher at Hitachi
Publications - 30
Citations - 2146
Riccardo Di Pietro is an academic researcher from Hitachi. The author has contributed to research in topics: Electron mobility & Field-effect transistor. The author has an hindex of 21, co-authored 30 publications receiving 1867 citations. Previous affiliations of Riccardo Di Pietro include University of Cambridge & University of Potsdam.
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Journal ArticleDOI
Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
Guanghao Lu,James C. Blakesley,James C. Blakesley,Scott Himmelberger,Patrick Pingel,Patrick Pingel,Johannes Frisch,Ingo Lieberwirth,Ingo Salzmann,Martin Oehzelt,Riccardo Di Pietro,Alberto Salleo,Norbert Koch,Dieter Neher +13 more
TL;DR: It is shown that blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping.
Journal ArticleDOI
The role of regioregularity, crystallinity, and chain orientation on electron transport in a high-mobility n-type copolymer.
Robert Steyrleuthner,Riccardo Di Pietro,Brian Collins,Frank Polzer,Scott Himmelberger,Marcel Schubert,Zhihua Chen,Shiming Zhang,Alberto Salleo,Harald Ade,Antonio Facchetti,Dieter Neher +11 more
TL;DR: The comparison between the regioregular and regioirregular polymers shows how the use of large planar functional groups leads to improved charge transport, with mobilities that are less affected by chemical and structural disorder with respect to classic semicrystalline polymers such as poly(3-hexylthiophene).
Journal ArticleDOI
Temperature-Independent Singlet Exciton Fission in Tetracene
Mark W. Wilson,Akshay Rao,Kerr Johnson,Simon Gélinas,Riccardo Di Pietro,Jenny Clark,Richard H. Friend +6 more
TL;DR: Together, these results require that singlets and triplet pairs in tetracene are effectively degenerate in energy, and begin to reconcile the temperature dependence of many macroscopic observables with a fission process which does not require thermal activation.
Journal ArticleDOI
Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors
TL;DR: In this article, the authors reveal the complicated evolution of band bending and actual carrier concentrations in three-terminal devices with non-Ohmic contacts, and its effect on the estimation of carrier mobility.
Journal ArticleDOI
Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n-channel Polymer Semiconductor
Mario Caironi,Matthew J. Bird,Daniele Fazzi,Zhihua Chen,Riccardo Di Pietro,Chris Newman,Antonio Facchetti,Henning Sirringhaus +7 more
TL;DR: In this article, the authors investigated charge transport in high-mobility n-channel organic field effect transistors (OFETs) based on poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis (dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2), Polyera ActivInk™ N2200) with variable-