K
Keisuke Ohdaira
Researcher at Japan Advanced Institute of Science and Technology
Publications - 190
Citations - 1842
Keisuke Ohdaira is an academic researcher from Japan Advanced Institute of Science and Technology. The author has contributed to research in topics: Amorphous silicon & Crystalline silicon. The author has an hindex of 20, co-authored 177 publications receiving 1595 citations. Previous affiliations of Keisuke Ohdaira include Tohoku University & National Presto Industries.
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Explosive crystallization of amorphous silicon films by flash lamp annealing
TL;DR: Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates.
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Antireflection subwavelength structure of silicon surface formed by wet process using catalysis of single nano-sized gold particle
TL;DR: Subwavelength structure (SWS) was formed by simple wet chemical etching using catalysis of gold (Au) nanoparticle in this paper, where single nano-sized Au particle dispersion solution was coated onto silicon (Si) substrate with polished surface.
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Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers
TL;DR: In this paper, the authors used a-Si films to enhance the effective carrier lifetime of n-type crystalline Si (c-Si) wafers, and SiNx films are also essential for reducing surface recombination velocities to such low levels.
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Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates
TL;DR: In this paper, flash lamp annealing of amorphous silicon (a-Si) films without thermal damage onto glass substrates was used for polycrystalline silicon formation.
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Changes in the current density–voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation
TL;DR: In this paper, the potential-induced degradation (PID) of n-type single-crystalline silicon (sc-Si) photovoltaic (PV) modules with a rear-side emitter was addressed.