Journal ArticleDOI
Explosive crystallization of amorphous silicon films by flash lamp annealing
TLDR
Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates.Abstract:
Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates. The EC starts from the edges of the a-Si films due to additional heating from flash lamp light. This is followed by lateral crystallization with a velocity on the order of m/s, leaving behind periodic microstructures in which regions containing several hundreds of nm-ordered grains and regions consisting of only 10-nm-sized fine grains alternatively appear. The formation of the dense grains can be understood as explosive solid-phase nucleation, whereas the several hundreds of nanometer-sized grains, stretched in the lateral direction, are probably formed through explosive liquid-phase epitaxy. This phenomenon will be applied to the high-throughput formation of thick poly-Si films for solar cells.read more
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Journal ArticleDOI
Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications
Uwe Kortshagen,R. Mohan Sankaran,Rui N. Pereira,Rui N. Pereira,Steven L. Girshick,Jeslin J. Wu,Eray S. Aydil +6 more
TL;DR: The fundamentals of nanocrystal formation in plasmas are discussed, practical implementations of plasma reactors are reviewed, the materials that have been produced with nonthermal plAsmas and surface chemistries that have be developed are surveyed, and an overview of applications of plasma-synthesized nanocrystals is provided.
Journal ArticleDOI
A review of thermal processing in the subsecond range: semiconductors and beyond
Journal ArticleDOI
Doping by flash lamp annealing
TL;DR: In this paper, the authors highlight processing issues (setup, comparison of annealing methods, relevant requirements for denoising due to doping, diffusion, activation, recrystallization, defect engineering), as well as doping issues for group IV-semiconductors (shallow junctions, hyperdoping, solar cells, superconductivity) and other semiconductors.
Journal ArticleDOI
Intense pulsed light processing for photovoltaic manufacturing
TL;DR: In this article, the use of pulsed light in photovoltaic manufacturing is discussed from a photonic physics perspective, the relevant heat transfer mechanisms, as well as its impact on the major PV manufacturing sectors.
Journal ArticleDOI
Formation of aligned periodic patterns during the crystallization of organic semiconductor thin films
John S. Bangsund,Thomas R. Fielitz,Thomas R. Fielitz,Trevor J. Steiner,Kaicheng Shi,Jack R. Van Sambeek,Catherine P. Clark,Russell J. Holmes +7 more
TL;DR: An approach to form periodic patterns in single layers of organic semiconductors by a simple annealing process, with a periodicity relevant to optoelectronic applications in the visible and near-infrared range.
References
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Book
Handbook of Physical Quantities
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Journal ArticleDOI
Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation
Michael Thompson,G. J. Galvin,James W. Mayer,Paul S. Peercy,J. M. Poate,Dale C. Jacobson,A. G. Cullis,N. G. Chew +7 more
TL;DR: In this article, it was shown that amorphous Si melts at a temperature at least 50 K below the crystalline value, and the initial liquid layer solidifies to form coarse-grained polycrystalline Si.
Journal ArticleDOI
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation
TL;DR: Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal substrates, have been crystallized in a differential scanning calorimeter (DSC) as discussed by the authors.
Journal ArticleDOI
Crystal grain nucleation in amorphous silicon
TL;DR: In this paper, the morphological evolution of the amorphous towards the polycrystalline phase is investigated by transmission electron microscopy and it is interpreted in terms of a physical model containing few free parameters related to the thermodynamical properties of ammorphous silicon and to the kinetical mechanisms of crystal grain growth.