https://www.tandfonline.com/doi/pdf/10.1080/14686996.2020.1812364

Heusler alloys for spintronic devices: review on recent development and future perspectives

Hysteresis is more than just an interesting oddity, which occurs in materials with a first-order transition. It is a real obstacle on the path from existing lab-scale prototypes of magnetic refrigerators towards commercialization of this potentially disruptive cooling technology. Indeed, the reversibility of the magnetocaloric effect, being essential for magnetic heat pumps, strongly depends on the width of the thermal hysteresis and therefore it is necessary to understand the mechanisms causing hysteresis and to find solutions how to minimize losses associated with thermal hysteresis in order to maximize the efficiency of magnetic cooling devices. In this work, we discuss fundamental aspects, which can contribute to thermal hysteresis and we are developing strategies for at least partially overcoming the hysteresis problem in some selected classes of magnetocaloric materials with large application potential. Doing so, we refer to the most relevant classes of magnetic refrigerants La-Fe-Si-, Heusler- and Fe2P-type compounds.

Mastering hysteresis in magnetocaloric materials

We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, {\alpha}-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet over a wide range of temperatures and magnetic field values. Using devices with different orientations, we demonstrate that the SMR response strongly depends on the direction of the charge current with respect to the magneto-crystalline anisotropies axis. We show that we can extract the anisotropies over a wide temperature range including across the Morin phase transition. We observe that the electrical response is dominated by the orientation of the antiferromagnetic Neel order parameter, rather than by the emergent weak magnetic moment. Our results highlight that the surface sensitivity of the SMR allows accessing the magnetic anisotropies of antiferromagnetic crystals and in particular thin films where other methods to determine anisotropies such as bulk-sensitive magnetic susceptibility measurements do not provide sufficient sensitivity.

Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe

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Giant tunneling magnetoresistance in Co2MnSi/Al-O/Co2MnSi magnetic tunnel junctions

Chiral antiferromagnets are currently considered for a broad range of applications in spintronics, spin-orbitronics, and magnonics. In contrast to the established approach relying on materials screening, the anisotropic and chiral responses of low-dimensional antiferromagnets can be tailored relying on the geometrical curvature. Here, we consider an achiral, anisotropic antiferromagnetic spin chain and demonstrate that these systems possess geometry-driven effects stemming not only from the exchange interaction but also from the anisotropy. Peculiarly, the anisotropy-driven effects are complementary to the curvature effects stemming from the exchange interaction and rather strong as they are linear in curvature. These effects are responsible for the tilt of the equilibrium direction of vector order parameters and the appearance of the homogeneous Dzyaloshinskii–Moriya interaction. The latter is a source of the geometry-driven weak ferromagnetism emerging in curvilinear antiferromagnetic spin chains. Our findings provide a deeper fundamental insight into the physics of curvilinear antiferromagnets beyond the σ-model and offer an additional degree of freedom in the design of spintronic and magnonic devices.

Curvature-driven homogeneous Dzyaloshinskii-Moriya interaction and emergent weak ferromagnetism in anisotropic antiferromagnetic spin chains

/pdf/magnetic-tunnel-junctions-with-metastable-bcc-co3mn-13k3kj8z9y.pdf

Magnetic tunnel junctions with metastable bcc Co3Mn electrodes

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is $380\phantom{\rule{0.16em}{0ex}}{\mathrm{emu}/\mathrm{cm}}^{3}$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

https://link.aps.org/accepted/10.1103/PhysRevMaterials.3.084403

Magnetic tunnel junctions with a B 2 -ordered CoFeCrAl equiatomic Heusler alloy

In this work, we describe an alternative strategy for the development of heat assisted magnetic recording media. In our approach, the need for a storage material with a temperature dependent anisotropy and to provide a read out signal is separated so that each function can be optimised independently. This is achieved by the use of an exchange bias structure where a conventional CoCrPt-SiO2 recording layer is exchange biased to an underlayer of IrMn such that heating and cooling in the exchange field from the recording layer results in a shifted loop. This strategy requires the reorientation of the IrMn layer to allow coupling to the recording layer. This has been achieved by the use of an ultrathin (0.8 nm) layer of Co deposited beneath the IrMn layer. In this system, the information is in effect stored in the antiferromagnetic layer, and hence, there is no demagnetising field generated by the stored bits. A loop shift of 688 Oe has been achieved where both values of coercivity lie to one side of the origin and the information cannot be erased by a magnetic field.

/pdf/hamr-media-based-on-exchange-bias-3l0loebxav.pdf

HAMR media based on exchange bias

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

Kelvin Elphick

Papers

Heusler alloys for spintronic devices: review on recent development and future perspectives

Magnetic tunnel junctions with metastable bcc Co3Mn electrodes

Magnetic tunnel junctions with a B 2 -ordered CoFeCrAl equiatomic Heusler alloy

HAMR media based on exchange bias

Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy