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Masahito Tsujikawa

Researcher at Tohoku University

Publications -  73
Citations -  1581

Masahito Tsujikawa is an academic researcher from Tohoku University. The author has contributed to research in topics: Magnetic anisotropy & Magnetization. The author has an hindex of 18, co-authored 60 publications receiving 1231 citations. Previous affiliations of Masahito Tsujikawa include Kanazawa University.

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Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(001): a first-principles study.

TL;DR: Although the magnetic anisotropy energy (MAE) density reveals large variation around the atoms, the intrinsic contribution to the MAE is found to mainly come from the Fe layer, and the surface without the capping Pt layer also shows similar linear dependence.
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Voltage controlled interfacial magnetism through platinum orbits

TL;DR: This work shows, by synchrotron X-ray absorption spectroscopy, electric field induction of magnetic dipole moments in a platinum monatomic layer placed on ferromagnetic iron, and indicates that electric quadrupole induction produces magnetic dipoles moments and provides a large magnetic anisotropy change.
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Abrupt Rotation of the Rashba Spin to the Direction Perpendicular to the Surface

TL;DR: The polarization vector of the Rashba spin is found to change abruptly and definitely to the direction perpendicular to the surface at the K point of the Brillouin zone of a real hexagonal system, the Tl/Si(111)-(1x1) surface.
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The origin of perpendicular magneto-crystalline anisotropy in L1(0)-FeNi under tetragonal distortion.

TL;DR: Analysis of the second-order perturbation of the spin-orbit interaction indicates that spin-flip excitations between the occupied majority-spin and unoccupied minority-spin bands make a considerable contribution to the perpendicular MCA, which increases as the in-plane lattice parameter decreases (increasing the axial ratio c/a).
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Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM.

TL;DR: This paper presents an overview of the early experimental observations of the VCMA effect in all-solid state devices, and introduces the concept of the voltage-induced dynamic switching technique, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.