K
Kern Rim
Researcher at IBM
Publications - 89
Citations - 3500
Kern Rim is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Silicon. The author has an hindex of 27, co-authored 88 publications receiving 3473 citations. Previous affiliations of Kern Rim include GlobalFoundries & Stanford University.
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Patent
Compressive sige growth and structure of mosfet devices
TL;DR: In this paper, a structure for conducting carriers and method for forming is described incorporating a single crystal substrate of Si or SiGe having an upper surface in the and a psuedomorphic or epitaxial layer of SiGe had a concentration of Ge different than the substrate whereby the psuedomorphism layer is under strain.
Patent
Dual metal integration scheme based on full silicidation of the gate electrode
TL;DR: An integration scheme that enables full silicidation (FUSI) of the nFET and pFET gate electrodes at the same time as that of the source/drain regions is provided in this paper.
Patent
Planar ultra-thin semiconductor-on-insulator channel mosfet with embedded source/drain
TL;DR: In this paper, a planar semiconductor substrate, a gate dielectric, and a gate self-aligned to and laterally coextensive with the gate is presented.
Patent
CMOS process with Si gates for nFETs and SiGe gates for pFETs
TL;DR: In this article, an integration scheme for providing Si gates for nFET devices and SiGe gates for pFET device on the same semiconductor substrate is provided, and the integration scheme includes first providing a material stack comprising, from bottom to top, a gate dielectric, a Si film, and a hard mask on a surface of a semiconductor surface that includes at least one n-fet device region and at least 1 p-fET device region.
Patent
Optimized deep source/drain junctions with thin poly gate in a field effect transistor
TL;DR: In this article, a semiconductor structure in which the poly depletion and parasitic capacitance problems with poly-Si gate are reduced is provided as well as a method of making the same.