Understanding how light interacts with matter at the nanometre scale is a fundamental issue in optoelectronics and nanophotonics. In particular, many applications (such as bio-sensing, cancer therapy and all-optical signal processing) rely on surface-bound optical excitations in metallic nanoparticles. However, so far no experimental technique has been capable of imaging localized optical excitations with sufficient resolution to reveal their dramatic spatial variation over one single nanoparticle. Here, we present a novel method applied on silver nanotriangles, achieving such resolution by recording maps of plasmons in the near-infrared/visible/ultraviolet domain using electron beams instead of photons. This method relies on the detection of plasmons as resonance peaks in the energy-loss spectra of subnanometre electron beams rastered on nanoparticles of well-defined geometrical parameters. This represents a significant improvement in the spatial resolution with which plasmonic modes can be imaged, and provides a powerful tool in the development of nanometre-level optics.

Mapping surface plasmons on a single metallic nanoparticle

The quantum-confined Stark effect in single cadmium selenide (CdSe) nanocrystallite quantum dots was studied. The electric field dependence of the single-dot spectrum is characterized by a highly polarizable excited state (∼10 5 cubic angstroms, compared to typical molecular values of order 10 to 100 cubic angstroms), in the presence of randomly oriented local electric fields that change over time. These local fields result in spontaneous spectral diffusion and contribute to ensemble inhomogeneous broadening. Stark shifts of the lowest excited state more than two orders of magnitude larger than the linewidth were observed, suggesting the potential use of these dots in electro-optic modulation devices.

Quantum Confined Stark Effect in Single CdSe Nanocrystallite Quantum Dots

The development of two-dimensional (2D) materials has been experiencing a renaissance since the adventure of graphene. Layered transition metal dichalcogenides (TMDs) are now playing increasingly important roles in both fundamental studies and technological applications due to their wide range of material properties from semiconductors, metals to superconductors. However, a material with fixed properties may not exhibit versatile applications. Due to the unique crystal structures, the physical and chemical properties of 2D TMDs can be effectively tuned through different strategies such as reducing dimensions, intercalation, heterostructure, alloying, and gating. With the flexible tuning of properties 2D TMDs become attractive candidates for a variety of applications including electronics, optoelectronics, catalysis, and energy.

Physical and chemical tuning of two-dimensional transition metal dichalcogenides

High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high photoconductive gain, responsivity and detectivity up to 3.3 × 10(17) Jones. Further analysis shows that their high performance originates from the unique band-edge modulation along the nanowire axial direction, where the existence of Schottky barriers in series leads to highly suppressed dark current of the device and also gives rise to fast photoelectric response to low-intensity optical signal owing to barrier height modulation. The discovered rationale in this work can be utilized as guideline to design high-performance photodetectors with other nanomaterial systems. The developed fabrication scheme opens up possibility for future flexible and high-performance integrated optoelectronic sensor circuitry.

/pdf/all-printable-band-edge-modulated-zno-nanowire-3mqeerenfb.pdf

All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity

The properties of propagating surface plasmon polaritons (SPPs) along one-dimensional metal structures have been investigated for more than 10 years and are now well understood. Because of the high confinement of electromagnetic energy, propagating SPPs have been considered to represent one of the best potential ways to construct next-generation circuits that use light to overcome the speed limit of electronics. Many basic plasmonic components have already been developed. In this review, researches on plasmonic waveguides are reviewed from the perspective of plasmonic circuits. Several circuit components are constructed to demonstrate the basic function of an optical digital circuit. In the end of this review, a prototype for an SPP-based nanochip is proposed, and the problems associated with building such plasmonic circuits are discussed. A plasmonic chip that can be practically applied is expected to become available in the near future.

/pdf/nanoplasmonic-waveguides-towards-applications-in-integrated-w8rib95soq.pdf

Nanoplasmonic waveguides: towards applications in integrated nanophotonic circuits

An integrated nanoscale light-emitting diode is used as an electrically driven optical source for exciting two-dimensionally localized gap plasmon waveguides with a 0.016λ2 cross-sectional area. Electrically driven subwavelength optical nanocircuits for routing, splitting and directional coupling are demonstrated in compact and relatively low-loss gap plasmon waveguide structures.

Electrically driven subwavelength optical nanocircuits

Nanometallic optical antennas can concentrate light into a deep-subwavelength volume for sensor and photovoltaic applications. Jun et al. demonstrate an optical antenna design that achieves a high level of control over fluorescent emission for a wide range of nanoscale optical spectroscopy applications.

/pdf/plasmonic-beaming-and-active-control-over-fluorescent-3hanls93cr.pdf

Plasmonic beaming and active control over fluorescent emission

This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.

Strained germanium thin film membrane on silicon substrate for optoelectronics.

We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.

Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LEDs) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100 nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and finite-difference time domain simulations, we discuss the implications for highly efficient Ge lasers.

Kevin C. Y. Huang

Papers

Electrically driven subwavelength optical nanocircuits

Plasmonic beaming and active control over fluorescent emission

Strained germanium thin film membrane on silicon substrate for optoelectronics.

Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser