K
Kjell Jeppson
Researcher at Chalmers University of Technology
Publications - 114
Citations - 2632
Kjell Jeppson is an academic researcher from Chalmers University of Technology. The author has contributed to research in topics: Graphene & Transistor. The author has an hindex of 21, co-authored 112 publications receiving 2451 citations. Previous affiliations of Kjell Jeppson include Shanghai University & Rockwell International.
Papers
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Journal ArticleDOI
Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
Kjell Jeppson,Christer Svensson +1 more
TL;DR: A detailed study of the increase of the number of surface traps in MOS structures after NBS at temperatures (25-125°C) and fields (400-700 MV/m) comparable to those used in MNOS devices is presented in this article.
Journal ArticleDOI
CMOS Circuit Speed and Buffer Optimization
N. Hedenstierna,Kjell Jeppson +1 more
TL;DR: An improved timing model for CMOS combinational logic is presented, which yields a better understanding of the switching behavior of the CMOS inverter than the step-response model by considering the slope of the input waveform.
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Modeling the influence of the transistor gain ratio and the input-to-output coupling capacitance on the CMOS inverter delay
TL;DR: In this article, an improved model for the ramp response of a CMOS inverter has been derived where the influences of the short-circuit current and the input-to-output coupling capacitance are considered.
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Improved Heat Spreading Performance of Functionalized Graphene in Microelectronic Device Application
Yong Zhang,Yong Zhang,Haoxue Han,Haoxue Han,Nan Wang,Pengtu Zhang,Yifeng Fu,Murali Murugesan,Michael Edwards,Kjell Jeppson,Kjell Jeppson,Sebastian Volz,Sebastian Volz,Johan Liu,Johan Liu +14 more
TL;DR: In this paper, a graphene-based film (GBF) functionalized with silane molecules has been shown to increase the thermal conductivity of the GBF with respect to the number density of molecules compared to that with the nonfunctionalized graphene substrate.
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Applications of Aluminium Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials
TL;DR: In this article, it is shown that it is possible to make SOI structures with aluminium nitride as buried insulator by means of wafer bonding and subsequent etch-back.