K
Knut E. Aasmundtveit
Researcher at Vestfold University College
Publications - 65
Citations - 887
Knut E. Aasmundtveit is an academic researcher from Vestfold University College. The author has contributed to research in topics: Intermetallic & Anodic bonding. The author has an hindex of 15, co-authored 56 publications receiving 799 citations. Previous affiliations of Knut E. Aasmundtveit include University of Oslo.
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Journal ArticleDOI
Au-Sn SLID Bonding—Properties and Possibilities
Torleif A. Tollefsen,Torleif A. Tollefsen,Andreas Larsson,Ole Martin Løvvik,Ole Martin Løvvik,Knut E. Aasmundtveit +5 more
TL;DR: In this article, a review of existing work on Au-Sn solid-liquid interdiffusion (SLID) bonding is given, together with a summary of the bonding conditions used during Au-sn SLID bonding.
Journal ArticleDOI
Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization
TL;DR: In this article, a simulation model for the development of IMCs and the unreacted remaining Sn thickness as a function of the bonding temperature profile was developed to optimize the Cu/Sn solid liquid interdiffusion process for wafer-level bonding applications.
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Intermetallic Compound Formation Mechanisms for Cu-Sn Solid–Liquid Interdiffusion Bonding
TL;DR: In this article, the authors studied the mechanisms of Cu-Sn SLID bonding for wafer-level bonding and three-dimensional (3-D) packaging applications by analyzing the microstructure evolution of intermetallic compounds (IMCs) at elevated temperature up to 400°C.
Journal ArticleDOI
Wafer-Level Cu/Sn to Cu/Sn SLID-Bonded Interconnects With Increased Strength
TL;DR: Wafer level Cu-Sn solid liquid interdiffusion (SLID) bonding of interconnects was achieved by bonding two-layered Cu/Sn structures to each other.
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High Temperature Interconnect and Die Attach Technology: Au–Sn SLID Bonding
TL;DR: Au-Sn solid-liquid interdiffusion (SLID) bonding is a promising interconnect and die attach technology for high temperature (HT) applications as discussed by the authors, which has the potential to be a key technology for the next generation of HT electronic devices.