K
Koutarou Kawahara
Researcher at Kyoto University
Publications - 24
Citations - 747
Koutarou Kawahara is an academic researcher from Kyoto University. The author has contributed to research in topics: Thermal oxidation & Ion implantation. The author has an hindex of 11, co-authored 23 publications receiving 659 citations.
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Journal ArticleDOI
Negative-U System of Carbon Vacancy in 4H-SiC
Nguyen Tien Son,Xuan Thang Trinh,Lars Løvlie,Bengt Gunnar Svensson,Koutarou Kawahara,Jun Suda,Tsunenobu Kimoto,Takahide Umeda,Junichi Isoya,Takahiro Makino,Takeshi Ohshima,Erik Janzén +11 more
TL;DR: Using EPR and deep-level transient spectroscopy, it is shown that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor and single donor levels of V(C), respectively.
Journal ArticleDOI
Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC
TL;DR: In this paper, the authors investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by low-dose N+, P+, and Al+ implantation, by deep level transient spectroscopy (DLTS).
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Analytical model for reduction of deep levels in SiC by thermal oxidation
TL;DR: In this paper, two trap-reduction processes, thermal oxidation and C+ implantation followed by Ar annealing, have been discovered, being effective ways for reducing the Z1/2 center (EC − 0.67 eV), which is a lifetime killer in n-type 4H-SiC.
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Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
TL;DR: In this paper, a long carrier lifetime of 33.2 µs was achieved by eliminating the Z1/2 center via thermal oxidation at 1400 °C for 48 h and subsequent surface passivation with a nitrided oxide on a 220µm-thick n-type 4H-SiC epilayer.
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Investigation on origin of Z[1/2] center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
TL;DR: In this article, the Z(1/2) center in n-type 4H-SiC epilayers was investigated using capacitance versus voltage (C-V) measurements and deep level transient measurements.