The diffusion coefficients of several transition elements (Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) and a few non-transition elements (Mg, Si, Ga, and Ge) in fcc and liquid Al are critically reviewed and assessed by means of the least-squares method and semi-empirical correlations. Inconsistent experimental data are identified and ruled out. In the case of the elements, for which plentiful experimental data are available in the literature, the least-squares analysis gives rise to the activation energies and pre-exponential factors in an Arrhenius equation. For the elements with limited experimental data or no data at all, the diffusion parameters are estimated from two semi-empirical correlations. In one correlation, the logarithmic pre-exponential factors are plotted against the activation energies for various elements in Al. In the other correlation, the activation energies are shown as a function of valences relative to Al. The diffusion coefficients calculated by using the evaluated diffusion parameters agree reasonably with the reliable experimental data. The proposed semi-empirical correlations are used to predict the diffusion coefficients of a few elements in liquid Al. A satisfactory agreement between the predicted and measured diffusion coefficients is obtained.

Diffusion coefficients of some solutes in fcc and liquid Al: critical evaluation and correlation

Modelling of work hardening and stress saturation in FCC metals

The effect of radiation upon diffusion in metals

This review presents the historical temporal evolution of an atom-probe tomograph (APT) from its genesis (1973) from field-ion microscope images of individual tungsten atoms (1955). The capabilities of modern APTs employing either electrical or laser pulsing are discussed. The results of the application of APTs to specific materials science problems are presented for research performed at Northwestern University on the following problems: (a) the segregation of Mg at α-Al/Al3Sc heterophase interfaces, (b) phase decomposition in ternary Ni-Al-Cr and quaternary Ni-Al-Cr-Re alloys, and (c) 3-D nanoscale composition mapping of an InAs semiconductor nanowire whose growth was catalyzed by gold. These results demonstrate that it is now possible to obtain highly quantitative information from APT that can be compared with modeling, theory, simulations, and/or first-principles calculations.

Three-Dimensional Atom-Probe Tomography: Advances and Applications

Vacancy defect mobilities and binding energies obtained from annealing studies

Tracer Diffusion of Magnesium in Aluminum Single Crystals

Self-diffusion in silver single crystals was measured at temperatures between 270 and 500 °C. The diffusion coefficients were in the range of 3×10−18 to 2×10−13 cm2/s. The results indicate that the Arrhenius plot is curved owing to a large divacancy contribution and that the activation energy for diffusion by divacancies is temperature dependent due to a partial dissociation of the divacancies. The best values of the parameters for diffusion by monovacancies are Do= 0.041 cm2/s, Q = 1.76 eV.

Self-diffusion in silver at low temperatures

Measurements of the diffusion of 64Cu in pure and impure α and γ iron show a large discontinuity in the Arrhenius plot of the lattice diffusion coefficient at the α‐γ transformation, contrary to the data of Anand and Agarwala [J. Appl. Phys. 37, 4248 (1965)]. Grain‐boundary diffusion predominates at T≤815°C in the α phase and at T≤1250°C in the γ phase. Trapping of the radioactive copper by inclusions or impurities in solution also appears to have a profound effect on the diffusion process.

L. J. Nowicki

Papers

Tracer Diffusion of Magnesium in Aluminum Single Crystals

Self-diffusion in silver at low temperatures

The Diffusion of Copper in Iron

Half-lives of nine radioisotopes

Self‐diffusion in copper at low temperatures