L
L. M. Ephrath
Publications - 4
Citations - 98
L. M. Ephrath is an academic researcher. The author has contributed to research in topics: Photolithography & Next-generation lithography. The author has an hindex of 3, co-authored 4 publications receiving 98 citations.
Papers
More filters
Journal ArticleDOI
One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET Technology
M. Y. Tsai,H. H. Chao,L. M. Ephrath,B.L. Crowder,A. Cramer,R. S. Bennett,C. J. Lucchese,M. R. Wordeman +7 more
Journal ArticleDOI
1 µm MOSFET VLSI technology: Part V—A single-level polysilicon technology using electron-beam lithography
TL;DR: An n-channel single-level polysilicon, 25 nm gate-oxide technology, using electron-beam lithography with a minimum feature size of 1 µm, has been implemented for MOSFET logic applications as mentioned in this paper.
Journal ArticleDOI
1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography
TL;DR: In this paper, an n-channel single-level polysilicon, 25 nm gate-oxide technology, using electron-beam lithography with a minimum feature size of 1 /spl mu/m, has been implemented for MOSFET logic applications.
Proceedings ArticleDOI
One-micrometer electron-beam lithography FET technology
TL;DR: In this article, an n-channel silicon gate technology using electron-beam lithography with minimum dimensions of 1 µm was implemented for FET logic applications, which employs semi-recessed oxide isolation and makes extensive use of ion implantation, resist liftoff techniques and reactive ion etching (RIE).