L
Leif Roschier
Researcher at Helsinki University of Technology
Publications - 42
Citations - 1088
Leif Roschier is an academic researcher from Helsinki University of Technology. The author has contributed to research in topics: Coulomb blockade & Carbon nanotube. The author has an hindex of 17, co-authored 39 publications receiving 1037 citations. Previous affiliations of Leif Roschier include Lebedev Physical Institute.
Papers
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High-Contrast Dispersive Readout of a Superconducting Flux Qubit Using a Nonlinear Resonator
TL;DR: High-contrast state detection of a superconducting flux qubit is demonstrated by probing the microwave transmission of a nonlinear resonator, based on a SQUID.
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Multiwalled carbon nanotube: Luttinger versus fermi liquid
Reeta Tarkiainen,M. Ahlskog,Jari Penttilä,Leif Roschier,Pertti Hakonen,M. Paalanen,Edouard Sonin,Edouard Sonin +7 more
TL;DR: In this paper, the authors measured the tunneling conductance of multwalled carbon nanotubes using end contacts and observed a crossover to Ohm's law with a Coulomb-blockade offset.
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Direct observation of Josephson capacitance
TL;DR: The effective capacitance has been measured in the split Cooper-pair box (CPB) over its phase-gate bias plane and it is shown that the method offers an efficient way to do nondemolition readout of the CPB quantum state.
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Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation
Leif Roschier,Jari Penttilä,Michel Martin,Pertti Hakonen,Mikko Paalanen,Unto Tapper,Esko I. Kauppinen,Catherine Journet,Patrick Bernier +8 more
TL;DR: In this paper, the Coulomb staircase model was used to characterize the capacitances and resistances between the carbon nanotube and the gold electrodes at SiO2 surface.
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Noise performance of the radio-frequency single-electron transistor
Leif Roschier,Pertti Hakonen,K. Bladh,Per Delsing,Konrad Lehnert,Lafe Spietz,Robert Schoelkopf +6 more
TL;DR: In this paper, a radio-frequency single-electron-transistor (RF-SET) circuit with an HEMT amplifier and an impedance transformer is analyzed, where the authors consider how power is transferred between different components of the circuit, model noise components, and analyze the operating conditions.