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Li Zhang

Researcher at University of Electronic Science and Technology of China

Publications -  87
Citations -  1859

Li Zhang is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Scanning tunneling microscope & Magnetization. The author has an hindex of 21, co-authored 85 publications receiving 1271 citations. Previous affiliations of Li Zhang include Carnegie Mellon University & Singapore–MIT alliance.

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Plasma-induced FeSiAl@Al2O3@SiO2 core–shell structure for exceptional microwave absorption and anti-oxidation at high temperature

TL;DR: In this article, a plasma-induced method is developed to get a multistrata core-shell structure of FeSiAl@Al2O3@SiO2 with bifunctional performances of microwave absorption and anti-oxidation.
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High-Temperature Oxidation-Resistant ZrN0.4B0.6/SiC Nanohybrid for Enhanced Microwave Absorption.

TL;DR: Heterogeneous ZrN0.4B0.6/SiC nanohybrid material features synergistically resulted in a well-defined Debye relaxation, Maxwell-Wagner relaxation, dipole polarization, and the quarter-wavelength cancellation, which accounted for the enhanced microwave absorption.
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The effect of external magnetic field on mark size in heat-assisted probe recording on CoNi/Pt multilayers

TL;DR: In this paper, a method of heat-assisted magnetic recording potentially suitable for probe-based storage systems is characterized, where field-emission current from a scanning tunneling microscope tip is used as the heating source.
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Hybrid silica-carbon bilayers anchoring on FeSiAl surface with bifunctions of enhanced anti-corrosion and microwave absorption

TL;DR: In this paper, the in-situ growth of double shells of silica and carbon on FeSiAl (FSA) alloy surface was presented to obtain an integrated FSA@SiO2@C hybrid structure via combined Stober and catalytic chemical vapor deposition (CCVD) techniques.
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Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

TL;DR: A systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition and domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism.