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Liangchi Zhang

Researcher at Southern University of Science and Technology

Publications -  553
Citations -  16152

Liangchi Zhang is an academic researcher from Southern University of Science and Technology. The author has contributed to research in topics: Grinding & Machining. The author has an hindex of 62, co-authored 523 publications receiving 13759 citations. Previous affiliations of Liangchi Zhang include Center for Advanced Materials & Harbin Institute of Technology.

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Understanding the effects of grinding speed and undeformed chip thickness on the chip formation in high-speed grinding

TL;DR: In this paper, the effects of single grain grinding of nickel-based superalloy Inconel 718 chips were investigated to determine the critical grinding speed and chip segmentation frequency with increasing the grinding speed.
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Atomistic structure of monocrystalline silicon in surface nano-modification

TL;DR: In this article, both experimental and theoretical studies on the atomic structure changes of monocrystalline silicon brought about by surface nano-modification are presented, revealing amorphous transformations with boundaries featuring faceting along {111} planes near the sample surface, which were altered to a random nature at the bottom of the transformation zone.
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Deformation and fracture of Macadamia nuts

TL;DR: In this article, a theoretical and numerical study of the stress distribution in nutshells being compressed between two rigid plates is presented, and an analytical solution for the contact between a spherical shell and rigid plates has been obtained based on conventional shell theories and Hertz' contact hypothesis, and the results correlate very well with finite element analysis.
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Machining of particulate-reinforced metal matrix composites: An investigation into the chip formation and subsurface damage

TL;DR: In this paper, a microstructure-based model for investigating the mechanisms of chip formation and subsurface damage in the machining of particulate-reinforced metal matrix composites (PRMMCs) was developed.
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Prediction of the threshold load of dislocation emission in silicon during nanoscratching

TL;DR: In this article, the authors established an analytical model to predict the normal threshold load that causes the emission of partial dislocations in silicon during nanoscratching, and the influence of indenter geometry and the location of dislocation nucleation on the threshold normal scratching load was investigated.