Premises of creation of Internet portal designed to provide access to participants of educational and scientific process for the joint creation, consolidation, concentration and rapid spreading of educational and scientific information resources in its own depository are considered. CMS-based portal content management systems’ potentiality is investigated. Architecture for Internet portal of MES of Ukraine’s information resources is offered.

Створення порталу інформаційно-довідкових ресурсів міністерства освіти і науки україни

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...

When group-III nitrides go infrared: New properties and perspectives

Research status of laser cladding on titanium and its alloys: A review

We have derived consistent sets of band parameters band gaps, crystal field splittings, band-gap deformation potentials, effective masses, and Luttinger and EP parameters for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the G0W0 approximation. The G0W0 method has been combined with density-functional theory DFT calculations in the exact-exchange optimized effective potential approach to overcome the limitations of local-density or gradient-corrected DFT functionals. The band structures in the vicinity of the point have been used to directly parametrize a 44 k·p Hamiltonian to capture nonparabolicities in the conduction bands and the more complex valence-band structure of the wurtzite phases. We demonstrate that the band parameters derived in this fashion are in very good agreement with the available experimental data and provide reliable predictions for all parameters, which have not been determined experimentally so far.

/pdf/consistent-set-of-band-parameters-for-the-group-iii-nitrides-3ws59u18fv.pdf

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

http://iopscience.iop.org/article/10.1088/0022-3727/40/20/S19/pdf

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure.

Growth of cubic InN on r-plane sapphire

Moderne Röntgenbeugung: Röntgendiffraktometrie für Materialwissenschaftler, Physiker und Chemiker

Commercial titanium was treated in ambient atmosphere using pulsed Nd:YAG ( λ = 1064 nm ) laser irradiation. Repeated laser treatments induce a removal of surface contaminants as well as the formation of a nanostructured top layer exhibiting a large effective surface and nanometer roughness. The laser induced oxidation leads to the presence of a surface layer with strongly improved, hydrothermally stable adhesion when joined to a one-component, hot-curing epoxy-based adhesive. Changes in the material properties have been characterized with respect to the topography, the chemical composition and the crystal structure using SEM, cross-beam FIB, XPS and XRD analyses in order to correlate the adhesion behavior with the structural and chemical characteristics of the surface.

Lothar Spieß

Papers

Growth of cubic InN on r-plane sapphire

Moderne Röntgenbeugung: Röntgendiffraktometrie für Materialwissenschaftler, Physiker und Chemiker

Improved adhesion at titanium surfaces via laser-induced surface oxidation and roughening

Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers

Influence of ion implantation on titanium surfaces for medical applications