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Luis Guillermo Villanueva

Researcher at École Polytechnique Fédérale de Lausanne

Publications -  112
Citations -  3919

Luis Guillermo Villanueva is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Resonator & Nanoelectromechanical systems. The author has an hindex of 27, co-authored 103 publications receiving 2929 citations. Previous affiliations of Luis Guillermo Villanueva include École Normale Supérieure & University of Copenhagen.

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Observation of a phononic quadrupole topological insulator

TL;DR: Measurements of a phononic quadrupole topological insulator are reported and topological corner states are found that are an important stepping stone to the experimental realization of topologically protected wave guides in higher dimensions, and thereby open up a new path for the design of metamaterials.
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Phase Synchronization of Two Anharmonic Nanomechanical Oscillators

TL;DR: This work establishes that oscillator networks constructed from nanomechanical resonators form an ideal laboratory to study synchronization--given their high-quality factors, small footprint, and ease of cointegration with modern electronic signal processing technologies.
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Frequency fluctuations in silicon nanoresonators

TL;DR: This work shows that all studies of frequency stability report values several orders of magnitude larger than the limit imposed by thermomechanical noise, and proposes a new method to show this was due to the presence of frequency fluctuations, of unexpected level.
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Surpassing Fundamental Limits of Oscillators Using Nonlinear Resonators

TL;DR: It is shown that by operating the oscillator at special points in the resonator's anharmonic regime the authors can overcome fundamental limitations of oscillator performance due to thermodynamic noise as well as practical limitations due to noise from the sustaining circuit.
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Evidence of surface loss as ubiquitous limiting damping mechanism in SiN micro- and nanomechanical resonators

TL;DR: An analytical model combining acoustic radiation loss with intrinsic loss is proposed, which accurately predicts the resulting mode-dependent Qs of low-stress silicon-rich and high-stress stoichiometric SiN membranes.