TiO(2) is one of the most studied compounds in materials science. Owing to some outstanding properties it is used for instance in photocatalysis, dye-sensitized solar cells, and biomedical devices. In 1999, first reports showed the feasibility to grow highly ordered arrays of TiO(2) nanotubes by a simple but optimized electrochemical anodization of a titanium metal sheet. This finding stimulated intense research activities that focused on growth, modification, properties, and applications of these one-dimensional nanostructures. This review attempts to cover all these aspects, including underlying principles and key functional features of TiO(2), in a comprehensive way and also indicates potential future directions of the field.

TiO2 nanotubes: synthesis and applications.

http://nathan.instras.com/documentDB/paper-69.pdf

Porous silicon: a quantum sponge structure for silicon based optoelectronics

Desorption mass spectrometry has undergone significant improvements since the original experiments were performed more than 90 years ago1. The most dramatic change occurred in the early1980s with the introduction of an organic matrix2,3,4 to transfer energy to the analyte. This reduces ion fragmentation but also introduces background ions from the matrix. Here we describe a matrix-free strategy forbiomolecular mass spectrometry based on pulsed-laser desorption–ionization from a porous silicon5 surface. Our method uses porous silicon to trap analytes deposited on the surface, and laser irradiation to vaporize and ionize them. We show that the method works at femtomole and attomole levels of analyte, and induces little or no fragmentation, in contrast to what is typically observed with other such approaches6,7,8,9,10,11. The ability to perform these measurements without a matrix3,4,12,13 also makes itmore amenable to small-molecule analysis. Chemical14 and structural15 modification of the porous silicon has enabled optimization of the ionization characteristics of the surface. Our technique offers good sensitivity as well as compatibility with silicon-based microfluidics and microchip technologies.

Desorption–ionization mass spectrometry on porous silicon

Damascene copper electroplating for on-chip interconnections, a process that we conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition. We discuss here the relationship of additives in the plating bath to superfilling, the phenomenon that results in superconformal coverage, and we present a numerical model which accounts for the experimentally observed profile evolution of the plated metal.

Damascene copper electroplating for chip interconnections

In the present review we try to give a comprehensive and most up to date view to the field, with an emphasis on the currently most investigated anodic TiO2 nanotube arrays. We will first give an overview of different synthesis approaches to produce TiO2 nanotubes and TiO2 nanotube arrays, and then deal with physical and chemical properties of TiO2 nanotubes and techniques to modify them. Finally, we will provide an overview of the most explored and prospective applications of nanotubular TiO2.

One-dimensional titanium dioxide nanomaterials: nanotubes.

We present detailed modeling and experimental results for an improved design of an InGaAsP-InP wavelength demultiplexer based on a monolithically integrated Rowland circle grating. The design incorporated ten wavelength channels at 1.55 /spl mu/m with a uniform spacing of 2 nm. The total on-chip loss was about 10 dB and the crosstalk between adjacent channels was as low as -25 dB. It was shown that low-loss etched turning mirrors can reduce the total on-chip loss by about 4 dB compared to traditional 90/spl deg/ curved multimode waveguides. By replacing standard flat grating facets with retro-reflecting V-shaped facets in the echelle grating, the loss was further reduced by 4 dB. Polarization independent operation within a passband of 0.5 nm was achieved by using multimode output waveguides. The potential sources producing the crosstalk have been analyzed and fabrication modifications for further improvement are suggested.

Monolithic integrated wavelength demultiplexer based on a waveguide Rowland circle grating in InGaAsP/lnP

Silica planar waveguide echelle grating demultiplexers with 48 channels and 256 channels are described and demonstrated. Polarization effects due to stress birefringence and polarization-dependent grating efficiency have been eliminated using a modified polarization compensator and grating design. The devices have a polarization-dependent wavelength shift of less than 10 pm, and a polarization-dependent loss below 0.2 dB. The 48-channel device has a measured crosstalk of -35 dB, an insertion loss better than 4 dB, and a uniformity of 1 dB across the C-band.

Planar waveguide echelle gratings in silica-on-silicon

We report a principle that allows one to write visible light emitting silicon patterns of arbitrary shape down to the submicrometer scale. We demonstrate that porous Si growth can electrochemically be initiated preferentially at surface defects created in an $n$-type Si substrate by ${\mathrm{Si}}^{++}$ focused ion beam bombardment. For $n$-type material in the dark, the electrochemical pore formation potential (Schottky barrier breakdown voltage) is significantly lower at the implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve the selectivity of the pore formation process.

Light Emitting Micropatterns of Porous Si Created at Surface Defects

Material aspects of nickel silicide for ULSI applications

We report a new principle and technique that allows one to electrodeposit material patterns of arbitrary shape down to the submicrometer scale. We demonstrate that an electrochemical metal deposition reaction can be initiated selectively at surface defects created in a p-type Si(100) substrate by Si (++) focused ion beam bombardment. The key principle is that, for cathodic electrochemical polarization of p-type material in the dark, breakdown of the blocking Schottky barrier at the semiconductor/electrolyte interface occurs at significantly lower voltages at implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve selective electrochemical deposition.

Lynden Erickson

Papers

Monolithic integrated wavelength demultiplexer based on a waveguide Rowland circle grating in InGaAsP/lnP

Planar waveguide echelle gratings in silica-on-silicon

Light Emitting Micropatterns of Porous Si Created at Surface Defects

Material aspects of nickel silicide for ULSI applications

Selective high-resolution electrodeposition on semiconductor defect patterns.