L
Lynford L. Goddard
Researcher at University of Illinois at Urbana–Champaign
Publications - 209
Citations - 3655
Lynford L. Goddard is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 30, co-authored 202 publications receiving 3174 citations. Previous affiliations of Lynford L. Goddard include Stanford University & Lawrence Livermore National Laboratory.
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Journal ArticleDOI
Deterministic signal associated with a random field
Taewoo Kim,Ruoyu Zhu,Tan H. Nguyen,Renjie Zhou,Chris Edwards,Lynford L. Goddard,Gabriel Popescu +6 more
TL;DR: It is shown that if, in addition to wide-sense stationarity, the fields are also wide- sense statistically homogeneous, then monochromatic plane waves can be used as an eigenfunction basis for the cross spectral density, and that the second-order statistics of these fields is fully described by the spatiotemporal power spectrum, a real, positive function.
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Protecting wafer surface during plasma ignition using an arsenic cap
TL;DR: In this paper, the use of a protective arsenic cap on the wafer is found to prevent such indirect damage, resulting in a 2-3x increase in photoluminescence intensity, sharper features in transmission electron microscopy, and a 30% decrease in laser thresholds.
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Sensing Sub-10 nm Wide Perturbations in Background Nanopatterns Using Optical Pseudoelectrodynamics Microscopy (OPEM).
TL;DR: A nondestructive noninterference far-field imaging method, built upon electrodynamic principles (mechanical work and force) of the light-matter interaction, rather than the intrinsic properties of light, which creates a new paradigm for exploring light- Matter interactions at the nanoscale using microscopy that can be extended to many other problems, e.g., bioimaging, material analysis, and nanometrology.
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In situ measurements of the axial expansion of palladium microdisks during hydrogen exposure using diffraction phase microscopy
TL;DR: In this paper, the axial expansion coefficient as a function of H2 concentration as well as image sequences were extracted from epi-illumination diffraction phase microscopy.
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Selective area formation of arsenic oxide-rich octahedral microcrystals during photochemical etching of n-type GaAs
TL;DR: In this paper, the formation of octahedral arsenic oxide microcrystals in selective areas of highly doped n-type GaAs substrates during rapid digital projection photochemical (PC) etching with sulfuric acid was demonstrated.