Introduction - signal pertubation IMD characterization techniques nonlinear analysis techniques nonlinear device modelling highly linear circuit design.

Intermodulation Distortion in Microwave and Wireless Circuits

Introduction Some Circuit Theory and Terminology Memory Effects in RF Power Amplifiers The Volterra Model Simulating and Measuring Memory Effects Cancellation of Memory Effects Characterization of the Volterra Model Appendix A: Volterra Analysis in More Detail Appendix B: IM3 Equations for Cascaded 2nd-Order Distortion Mechanisms Appendix C: The Truncation Error

Distortion in RF power amplifiers

Remarkable developments in bipolar technology over the past decade have seen the silicon germanium heterojunction bipolar transistor emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high frequency wireless and optical communications applications that were previously only possible in III/V and II/VI devices. This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe heterojunction bipolar transistors.

https://leseprobe.buch.de/images-adb/cc/68/cc681325-f4d0-46db-9ce8-2f97a1b2bc3e.pdf

SiGe Heterojunction Bipolar Transistors

Preface Introduction and general survey History, architecture and negative feedback The general principles of power amplifiers The small signal stages The Class-B output stage The output stage II Compensation, slew-rate, and stability Power supplies and PSRR Class-A power amplifiers Class D power amplifiers Class-G power amplifiers FET output stages Thermal compensation and thermal dynamics Amplifier and loudspeaker protection Grounding and practical matters Testing and safety Index

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Audio power amplifier design handbook

It has been well known for many years that the transit time model used in the SPICE Gummel-Poon model (SGPM) is not adequate for reliable design of circuits operating either at high current densities (including quasi-saturation), which is often the case in high-speed integrated circuits, or at low voltages, which is important for low-power applications. In addition, extraction of the SGPM's transit time model parameters is often very difficult and time consuming. Although various proposals for modeling the transit time were published in the past, most of them are not suited for compact transistor models required in circuit simulation from a numerical, parameter extraction and lateral scaling point of view. In this paper, a set of minority charge and transit time equations is derived which are physics-based and laterally scaleable as well as suitable for incorporation into compact models. Experimental results of the new model are presented in terms of transit time and transit frequency versus bias (I/sub C/, V/sub CE/), geometry, and temperature, showing excellent agreement for different types of silicon homojunction bipolar transistors.

Physics-based minority charge and transit time modeling for bipolar transistors

This paper details the VBIC95 bipolar junction transistor (BJT) model. The model was developed as an industry standard replacement for the SPICE Gummel-Poon (SGP) model, to improve deficiencies of the SGP model that have become apparent over time because of the advances in BJT process technology. VBIC95 is still based on the Gummel-Poon formulation, and thus can degenerate to be similar to the familiar SGP model. However, it includes improved modeling of the Early effect, quasi-saturation, substrate and oxide parasitics, avalanche multiplication, and temperature behavior that can be invoked selectively based on model parameter values.

VBIC95, the vertical bipolar inter-company model

This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.

M. McSwain

Papers

VBIC95, the vertical bipolar inter-company model

VBIC95: An improved vertical, IC bipolar transistor model