M
M. R. Gokhale
Researcher at Tata Institute of Fundamental Research
Publications - 43
Citations - 570
M. R. Gokhale is an academic researcher from Tata Institute of Fundamental Research. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Photoluminescence. The author has an hindex of 13, co-authored 43 publications receiving 537 citations.
Papers
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Journal ArticleDOI
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
Priti Gupta,A. Azizur Rahman,Nirupam Hatui,M. R. Gokhale,Mandar M. Deshmukh,Arnab Bhattacharya +5 more
TL;DR: In this paper, the growth and characterization of group III-nitride semiconductor layers on graphene grown by chemical vapour deposition was reported, and the effect of varying growth temperature and V/III ratio was investigated under optimized growth conditions preferentially semipolar (10 1 ¯ 1 ) oriented nitride layers.
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Distorted wurtzite unit cells: Determination of lattice parameters of non-polar a-plane AlGaN and estimation of solid phase Al content
Masihhur R. Laskar,Tapas Ganguli,A. Azizur Rahman,Amlan Mukherjee,M. R. Gokhale,Arnab Bhattacharya +5 more
TL;DR: In this paper, a simple procedure for measurement of lattice parameters of non-polar group III-nitrides epilayers from high-resolution x-ray diffraction measurements is presented.
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Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content
Masihhur R. Laskar,Tapas Ganguli,A. Azizur Rahman,Amlan Mukherjee,Nirupam Hatui,M. R. Gokhale,Arnab Bhattacharya +6 more
TL;DR: In this paper, a simple procedure for measurement of lattice parameters of nonpolar group III-nitrides epilayers from high-resolution x-ray diffraction measurements is presented.
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Polarized photoluminescence and absorption in A-plane InN films
TL;DR: In this paper, the authors reported the observation of strong polarization anisotropy in photoluminescence (PL) and the absorption spectra of [112¯0] oriented A-plane wurtzite InN films grown on R-plane (11¯02) sapphire substrates using molecular beam epitaxy.
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Facile fabrication of lateral nanowire wrap-gate devices with improved performance
Sajal Dhara,Shamashis Sengupta,Hari S. Solanki,Arvind Maurya,R Arvind Pavan,M. R. Gokhale,Arnab Bhattacharya,Mandar M. Deshmukh +7 more
TL;DR: In this article, a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility is presented, using e-beam lithography with a single resist-spinning step and does not require chemical etching.