M
Masihhur R. Laskar
Researcher at University of Wisconsin-Madison
Publications - 27
Citations - 1184
Masihhur R. Laskar is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Epitaxy & Metalorganic vapour phase epitaxy. The author has an hindex of 13, co-authored 26 publications receiving 1033 citations. Previous affiliations of Masihhur R. Laskar include Tata Institute of Fundamental Research & Ohio State University.
Papers
More filters
Journal ArticleDOI
p-type doping of MoS2 thin films using Nb
Masihhur R. Laskar,Digbijoy N. Nath,Lu Ma,Edwin W. Lee,Choong Hee Lee,Thomas F. Kent,Zihao Yang,Rohan Mishra,Manuel A. Roldan,Juan Carlos Idrobo,Sokrates T. Pantelides,Stephen J. Pennycook,Roberto C. Myers,Yiying Wu,Siddharth Rajan +14 more
TL;DR: In this paper, the first demonstration of substitutional p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS2 was reported, where Niobium was found to act as an efficient acceptor up to relatively high density in MoS 2 films.
Journal ArticleDOI
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar,Lu Ma,ShanthaKumar K,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Wu Lu,Yiying Wu,Siddharth Rajan +8 more
TL;DR: In this article, chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far.
Journal ArticleDOI
Large area single crystal (0001) oriented MoS2
Masihhur R. Laskar,Lu Ma,Santhakumar Kannappan,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Wu Lu,Yiying Wu,Siddharth Rajan +8 more
TL;DR: In this paper, chemical vapor deposition (CVD) can be used to achieve large area single crystal Molybdenum Disulfide (MoS2) thin films.
Journal ArticleDOI
Atomic Layer Deposited MgO: A Lower Overpotential Coating for Li[Ni0.5Mn0.3Co0.2]O2 Cathode
Masihhur R. Laskar,David H. K. Jackson,Shenzhen Xu,Robert J. Hamers,Dane Morgan,Thomas F. Kuech +5 more
TL;DR: Cyclic voltammetry studies suggested that ALD MgO has a higher Li-diffusion coefficient which resulted in lower overpotential on the NMC cathode surface and improved Li-ion battery rate performance, which yielded improved capacity retention over uncoated NMC in a long-range cycling test.
Journal ArticleDOI
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.
Priti Gupta,A. Azizur Rahman,Shruti Subramanian,Shalini Gupta,Shalini Gupta,Arumugam Thamizhavel,Tatyana Orlova,Sergei Rouvimov,Suresh Vishwanath,Vladimir Protasenko,Masihhur R. Laskar,Huili Grace Xing,Debdeep Jena,Arnab Bhattacharya +13 more
TL;DR: In this paper, the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy was studied and it was shown that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.