Journal ArticleDOI
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene
Priti Gupta,A. Azizur Rahman,Nirupam Hatui,M. R. Gokhale,Mandar M. Deshmukh,Arnab Bhattacharya +5 more
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TLDR
In this paper, the growth and characterization of group III-nitride semiconductor layers on graphene grown by chemical vapour deposition was reported, and the effect of varying growth temperature and V/III ratio was investigated under optimized growth conditions preferentially semipolar (10 1 ¯ 1 ) oriented nitride layers.About:
This article is published in Journal of Crystal Growth.The article was published on 2013-06-01. It has received 75 citations till now. The article focuses on the topics: Nitride & Metalorganic vapour phase epitaxy.read more
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Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Yunjo Kim,Samuel S. Cruz,Kyusang Lee,Babatunde Alawode,Chanyeol Choi,Yi Song,Jared M. Johnson,Christopher Heidelberger,Wei Kong,Shinhyun Choi,Kuan Qiao,Ibraheem Almansouri,Ibraheem Almansouri,Eugene A. Fitzgerald,Jing Kong,Alexie M. Kolpak,Jinwoo Hwang,Jeehwan Kim +17 more
TL;DR: It is shown that the weak van der Waals potential of graphene cannot completely screen the stronger potential field of many substrates, which enables epitaxial growth to occur despite its presence, and is also applicable to InP and GaP.
Journal ArticleDOI
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
Jeehwan Kim,Can Bayram,Hongsik Park,Cheng-Wei Cheng,Christos D. Dimitrakopoulos,John A. Ott,Kathleen B. Reuter,Stephen W. Bedell,Devendra K. Sadana +8 more
TL;DR: This work demonstrates direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates.
Journal ArticleDOI
Integration of bulk materials with two-dimensional materials for physical coupling and applications.
Sang-Hoon Bae,Hyun Kum,Wei Kong,Yunjo Kim,Chanyeol Choi,Byung Hun Lee,Peng Lin,Yongmo Park,Jeehwan Kim +8 more
TL;DR: The state-of-the-art fabrication of 2D and 3D heterostructures are reviewed, a critical survey of unique phenomena arising from forming 3D/2D interfaces are presented, and potential directions for research based on these new coupled architectures are discussed.
Journal ArticleDOI
Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
Yazeed Alaskar,Yazeed Alaskar,Shamsul Arafin,Darshana Wickramaratne,M. A. Zurbuchen,Liang He,Jeff McKay,Qiyin Lin,Mark S. Goorsky,Roger K. Lake,Kang L. Wang +10 more
TL;DR: In this article, a quasi van der Waals growth of GaAs on silicon using a two-dimensional layered material, graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer layer is presented.
Journal ArticleDOI
Epitaxy of GaN Nanowires on Graphene.
Vishnuvarthan Kumaresan,Ludovic Largeau,Ali Madouri,Frank Glas,H. Zhang,Fabrice Oehler,Antonella Cavanna,A. V. Babichev,A. V. Babichev,Laurent Travers,Noelle Gogneau,Maria Tchernycheva,Jean-Christophe Harmand +12 more
TL;DR: Graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures and a model for the nanowire density variation is proposed.
References
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The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Xuesong Li,Weiwei Cai,Jinho An,Seyoung Kim,Junghyo Nah,Dongxing Yang,Richard D. Piner,Aruna Velamakanni,Inhwa Jung,Emanuel Tutuc,Sanjay K. Banerjee,Luigi Colombo,Rodney S. Ruoff +12 more
TL;DR: It is shown that graphene grows in a self-limiting way on copper films as large-area sheets (one square centimeter) from methane through a chemical vapor deposition process, and graphene film transfer processes to arbitrary substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.
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Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
TL;DR: Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated and the growths of linearly-shaped staggered In GaN QWs by employing graded growth temperature grading are presented.
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Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
TL;DR: In this article, a staggered InGaN quantum well with step-function-like In content in the quantum well offers significantly improved radiative recombination rate and optical gain in comparison to the conventional type-I In-GaN QW.
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Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes.
Gunho Jo,Minhyeok Choe,Chu-Young Cho,Jin Ho Kim,Woojin Park,Sangchul Lee,Woong-Ki Hong,Woong-Ki Hong,Tae-Wook Kim,Tae-Wook Kim,Seong-Ju Park,Byung Hee Hong,Yung Ho Kahng,Takhee Lee +13 more
TL;DR: This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes as a potential development toward future practical application of graphene electrodes in optoelectronic devices.