M
M. Stachowicz
Researcher at Polish Academy of Sciences
Publications - 49
Citations - 334
M. Stachowicz is an academic researcher from Polish Academy of Sciences. The author has contributed to research in topics: Molecular beam epitaxy & Chemistry. The author has an hindex of 11, co-authored 31 publications receiving 268 citations.
Papers
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Journal ArticleDOI
XPS study of arsenic doped ZnO grown by Atomic Layer Deposition
D. Snigurenko,Rafal Jakiela,Elzbieta Guziewicz,E. Przezdziecka,M. Stachowicz,Krzysztof Kopalko,Adam Barcz,Wojciech Lisowski,Janusz W. Sobczak,M. Krawczyk,Aleksander Jablonski +10 more
TL;DR: In this paper, X-ray photoelectron spectroscopy (XPS) studies of the ZnO:As films revealed the complex As3d core level spectra formed by three components located at about 41eV, 45eV and 47.5eV below the Fermi level.
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The photoluminescence response to structural changes of Yb implanted ZnO crystals subjected to non-equilibrium processing
Renata Ratajczak,Slawomir Prucnal,Elzbieta Guziewicz,Cyprian Mieszczynski,D. Snigurenko,M. Stachowicz,Wolfgang Skorupa,Andrzej Turos +7 more
TL;DR: In this article, two different types of annealing were performed: Rapid Thermal Annealing (RTA) and millisecond range flash lamp anneeling (FLA) for Yb implanted single ZnO crystals.
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Characteristics of ZnO:As/GaN heterojunction diodes obtained by PA-MBE
E. Przezdziecka,A. Wierzbicka,Anna Reszka,K. Goscinski,A. Droba,Rafal Jakiela,D. Dobosz,Tomasz A. Krajewski,Krzysztof Kopalko,J.M. Sajkowski,M. Stachowicz,M.A. Pietrzyk,Adrian Kozanecki +12 more
TL;DR: In this paper, a wideband-gap heterojunction diodes based on the p-ZnO/n-GaN material system was presented. But the performance of this type of Diodes was not evaluated by x-ray diffraction, atomic force microscopy and scanning electron microscopy.
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Spectrum selective UV detectors from an p-ZnO:As/n-GaN diodes grown by Molecular Beam Epitaxy
E. Przeździecka,K. Gościński,M. Stachowicz,D. Dobosz,E. Zielony,J.M. Sajkowski,M.A. Pietrzyk,Ewa Placzek-Popko,Adrian Kozanecki +8 more
TL;DR: In this paper, a very good response to ultraviolet light illumination of this structure was observed from photo current measurements, the difference between the dark and bright current was relatively large and it is at about 10 4.
Journal ArticleDOI
Atomic layer deposited ZnO films implanted with Yb: The influence of Yb location on optical and electrical properties
Elzbieta Guziewicz,Renata Ratajczak,M. Stachowicz,D. Snigurenko,Tomasz A. Krajewski,Cyprian Mieszczynski,K. Mazur,Bartlomiej S. Witkowski,Piotr Dłużewski,K. Morawiec,Andrzej Turos +10 more
TL;DR: In this article, annealing under an ambient atmosphere at 800°C leads to partial recovery of the crystal lattice but also substantially reduces substitutional fraction of Ytterbium atoms.