International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that results in resonant absorption, scattering, and near field enhancement around the NC can be tuned across a wide optical spectral range from visible to far-infrared by synthetically varying doping level, and post synthetically via chemical oxidation and reduction, photochemical control, and electrochemical control In this review, we will discuss the fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs Here, we will illustrate how free carrier dielectric properties are induced in various semiconductor materials including metal oxides, metal chalcogenides, metal nitrides, silicon, and other materials We will highlight the applicability and limitations of the Drude model as applied to semiconductors considering the complex band structures 

Localized Surface Plasmon Resonance in Semiconductor Nanocrystals

Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

Abstract The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Mid-infrared integrated photonics on silicon: a perspective

Magnesium Oxide (MgO).- Zincblende Magnesium Sulphide (?-MgS).- Zincblende Magnesium Selenide (?-MgSe).- Zincblende Magnesium Telluride (?-MgTe).- Zinc Oxide (ZnO).- Wurtzite Zinc Sulphide (?-ZnS).- Cubic Zinc Sulphide (?-ZnS).- Zinc Selenide (ZnSe).- Zinc Telluride (ZnTe).- Cubic Cadmium Sulphide (c-CdS).- Wurtzite Cadmium Sulphide (w-CdS).- Cubic Cadmium Selenide (c-CdSe).- Wurtzite Cadmium Selenide (w-CdSe).- Cadmium Telluride (CdTe).- Cubic Mercury Sulphide (?-HgS).- Mercury Selenide (HgSe).- Mercury Telluride (HgTe).

Handbook on physical properties of semiconductors

The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-standing scientific challenge for many decades since most photons with sub-band gap energies pass through Si unabsorbed. This fundamental shortcoming, however, can be overcome by introducing non-equilibrium deep-level dopant concentrations into Si, which results in the formation of an impurity band allowing for strong sub-band gap absorption. Here, we present steady-state room-temperature short-wavelength infrared p-n photodiodes from single-crystalline Si hyperdoped with Se concentrations as high as 9 × 1020 cm-3, which are introduced by a robust and reliable non-equilibrium processing consisting of ion implantation followed by millisecond-range flash lamp annealing. We provide a detailed description of the material properties, working principle and performance of the photodiodes as well as the main features in the studied wavelength region. This work fundamentally contributes to establish the short-wavelength infrared detection by hyperdoped Si in the forefront of the state-of-the-art of short-IR Si photonics.

/pdf/room-temperature-short-wavelength-infrared-si-photodetector-16bexvowb6.pdf

Room-temperature short-wavelength infrared Si photodetector

https://iopscience.iop.org/article/10.1088/0268-1242/31/10/103001/pdf

A review of thermal processing in the subsecond range: semiconductors and beyond

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

/pdf/ultra-doped-n-type-germanium-thin-films-for-sensing-in-the-3r7mv2g2mq.pdf

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

A Si metal-oxide-semiconductor electroluminescent device structure is reported which emits two colors, while being doped with a single rare-earth element. Thermally grown SiO2 oxide layers were implanted with Eu and subseqently annealed. Depending on the electrical excitation current, the luminescence is red or blue, which can be ascribed to electronic transitions in tri- and divalent europium (Eu3+ and Eu2+), respectively.

/pdf/switchable-two-color-electroluminescence-based-on-a-si-metal-1yzsbphx3m.pdf

Slawomir Prucnal

Papers

Room-temperature short-wavelength infrared Si photodetector

A review of thermal processing in the subsecond range: semiconductors and beyond

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu

Blue shift in absorption edge and widening of band gap of ZnO by Al doping and Al–N co-doping