Luminogenic materials with aggregation-induced emission (AIE) attributes have attracted much interest since the debut of the AIE concept in 2001. In this critical review, recent progress in the area of AIE research is summarized. Typical examples of AIE systems are discussed, from which their structure–property relationships are derived. Through mechanistic decipherment of the photophysical processes, structural design strategies for generating new AIE luminogens are developed. Technological, especially optoelectronic and biological, applications of the AIE systems are exemplified to illustrate how the novel AIE effect can be utilized for high-tech innovations (183 references).

Aggregation-induced emission

Aggregation-induced emission: phenomenon, mechanism and applications.

This paper reviews the state-of-the art in vibration energy harvesting for wireless, self-powered microsystems. Vibration-powered generators are typically, although not exclusively, inertial spring and mass systems. The characteristic equations for inertial-based generators are presented, along with the specific damping equations that relate to the three main transduction mechanisms employed to extract energy from the system. These transduction mechanisms are: piezoelectric, electromagnetic and electrostatic. Piezoelectric generators employ active materials that generate a charge when mechanically stressed. A comprehensive review of existing piezoelectric generators is presented, including impact coupled, resonant and human-based devices. Electromagnetic generators employ electromagnetic induction arising from the relative motion between a magnetic flux gradient and a conductor. Electromagnetic generators presented in the literature are reviewed including large scale discrete devices and wafer-scale integrated versions. Electrostatic generators utilize the relative movement between electrically isolated charged capacitor plates to generate energy. The work done against the electrostatic force between the plates provides the harvested energy. Electrostatic-based generators are reviewed under the classifications of in-plane overlap varying, in-plane gap closing and out-of-plane gap closing; the Coulomb force parametric generator and electret-based generators are also covered. The coupling factor of each transduction mechanism is discussed and all the devices presented in the literature are summarized in tables classified by transduction type; conclusions are drawn as to the suitability of the various techniques.

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Energy harvesting vibration sources for microsystems applications

This review reports the progress on the recent development of micromixers. The review first presents the different micromixer types and designs. Micromixers in this review are categorized as passive micromixers and active micromixers. Due to the simple fabrication technology and the easy implementation in a complex microfluidic system, passive micromixers will be the focus of this review. Next, the review discusses the operation points of the micromixers based on characteristic dimensionless numbers such as Reynolds number Re, Peclet number Pe, and in dynamic cases the Strouhal number St. The fabrication technologies for different mixer types are also analysed. Quantification techniques for evaluation of the performance of micromixers are discussed. Finally, the review addresses typical applications of micromixers.

https://iopscience.iop.org/article/10.1088/0960-1317/15/2/R01/pdf

Micromixers?a review

Most present-day semiconductor devices use inorganic crystalline materials, with single-crystalline silicon dominating other materials like GaAs by about a factor of 1000. Despite the advantages of single-crystalline inorganic semiconductors like high room-temperature mobility (up to 1000 cm2/(V s)) and high stability, these materials are less suitable for low-cost and large-area applications. Additionally, silicon is an indirect semiconductor and therefore is not well suited for optoelectronic applications like light-emitting diodes. Solar cells from silicon are expensive and require a large amount of energy for their fabrication, leading to a long energy payback time. As an alternative, organic semiconductors have recently gained much attention (for review articles, see refs 1 -3 (OLEDs), ref 4 (organic electronics in general), and refs 5 and 6 (organic solar cells)). Originally, much of the research concentrated on single crystals, which can have mobilities of a few cm2/(V s) at room temperature and even much higher values at low temperature, as shown in the pioneering work of Karl et al.7 However, for practical applications, thinfilm organic semiconductors with disordered morphology, such as evaporated small-molecule compounds or polymers processed from solution, are prevailing. Organic semiconductors are already broadly applied as photoconductors for copiers and laser printers. * Corresponding author. E-mail: leo@iapp.de. Web address: www.iapp.de. 1233 Chem. Rev. 2007, 107, 1233−1271

Highly efficient organic devices based on electrically doped transport layers.

Nickel (Ni) induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 °C from 1 to 90 h. Micro-Auger electron spectroscopy revealed that a large amount of Ni stayed in the region under the original Ni coverage, but no Ni was detected either in the crystallized region next to the Ni coverage or in the amorphous region beyond the front of the laterally crystallized Si. X-ray photoelectron spectroscopy revealed a nonuniform Ni distribution through the depth of the crystallized film under the original Ni coverage. In particular, a Ni concentration peak was found to exist at the interface of the crystallized Si and the buried oxide. It was found that a layer of 5-nm-thick Ni could effectively induce lateral crystallization of over 100 μm of a-Si, but the lateral crystallization rate was found to decrease upon extended heat treatment. Transmission e...

Nickel induced crystallization of amorphous silicon thin films

Micromachining technology was utilized to fabricate a transparent microchannel heat-sink system by bonding glass to a silicon wafer. The micro heat sink consisted of a microchannel array, a heater, and a temperature sensor array. This integrated microsystem allowed simultaneous qualitative visualizations of the flow pattern within the microchannels and quantitative measurements of temperature distributions, flow rates, and input power levels. Boiling curves of temperature as a function of the input power were established. No boiling plateau was observed in the boiling curves, consistent with our previously reported data but different from results reported for macrochannel heat sinks. Three stable boiling modes, depending on the input power level, have been distinguished from the flow patterns. Local nucleation boiling was observed in microchannels with a hydraulic diameter as small as 26 /spl mu/m at the lower input power range. At the higher input power range, a stable annular flow was the dominant boiling mode. Bubbly flow, commonly observed in macrochannels, could not be developed in the present microchannels. Consequently, no boiling plateau was detected in the boiling curves.

Forced convection boiling in a microchannel heat sink

Efficient light emission was obtained in a silole-based organic light-emitting diode. A high luminous current efficiency of 20 cd/A, corresponding to an external quantum efficiency of 8%, was achieved. The apparent violation of the upper theoretical limit of 5.5% for the external quantum efficiency of a singlet emitter is discussed. With a suitably designed cathode, a high power efficiency of ∼14 lm/W was obtained. A strong dependence of the power efficiency on the thickness of Alq3 layer is also observed and explained.

Highly efficient organic light-emitting diodes with a silole-based compound

Thin film transistors (TFTs) with low-temperature processed metal-induced laterally crystallized (MILC) channels and self-aligned metal-induction crystallized (MIC) source and drain regions have been demonstrated recently as potential devices for realizing electronics on large-area, inexpensive glass panels. While these TFTs are better than their solid-phase crystallized counterparts in many device performance measures, they suffer from higher off-state leakage current and early drain breakdown. A new technology is proposed, employing metal-induced-unilateral crystallization (MIUC), which results in the removal from the edges of and within the channel region all major grain boundaries transverse to the drain current flow. Compared to the conventional "bilateral" MILC TFTs, the new MIUC devices are shown to have higher field-effect mobility, significantly reduced leakage current, better immunity to early drain breakdown, and much improved spatial uniformity of the device parameters. Thus they are particularly suitable for realizing low temperature CMOS systems on inexpensive glass panels.

High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

Perovskite solar cells (PSCs) are one of the promising photovoltaic technologies for solar electricity generation. NiO x is an inorganic p-type semiconductor widely used to address the stability issue of PSCs. Although high efficiency is obtained for the devices employing NiO x as the hole transport layer, the fabrication methods have yet to be demonstrated for industrially relevant manufacturing of large-area and high-performance devices. Here, it is shown that these requirements can be satisfied by using the magnetron sputtering, which is well established in the industry. The limitations of low fill factor and short-circuit current commonly observed in sputtered NiO x -derived PSCs can be overcome through magnesium doping and low oxygen partial pressure deposition. The fabricated PSCs show a high power conversion efficiency of up to 18.5%, along with negligible hysteresis, improved ambient stability, and high reproducibility. In addition, good uniformity is also demonstrated over an area of 100 cm2. The simple and well-established approach constitutes a reliable and scale method paving the way for the commercialization of PSCs.

https://www.onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201700463

Man Wong

Papers

Nickel induced crystallization of amorphous silicon thin films

Forced convection boiling in a microchannel heat sink

Highly efficient organic light-emitting diodes with a silole-based compound

High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

Overcoming the Limitations of Sputtered Nickel Oxide for High-Efficiency and Large-Area Perovskite Solar Cells.