M
Mangal Das
Researcher at Indian Institute of Technology Indore
Publications - 29
Citations - 318
Mangal Das is an academic researcher from Indian Institute of Technology Indore. The author has contributed to research in topics: Memristor & Computer science. The author has an hindex of 7, co-authored 22 publications receiving 176 citations. Previous affiliations of Mangal Das include ABES Engineering College & Indian Institute of Technology Bombay.
Papers
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Journal ArticleDOI
Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering
A. Kumar,Mangal Das,Vivek Garg,Brajendra S. Sengar,Myo Than Htay,Shailendra Kumar,Abhinav Kranti,Shaibal Mukherjee +7 more
TL;DR: In this article, dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps.
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Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering.
TL;DR: An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems.
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Architecture tailoring of MoO3 nanostructures for superior ethanol sensing performance
TL;DR: In this paper, the results revealed that MoO3 nanofibers had better crystalline properties, higher surface area and surface defects as compared to MoO2 nanobelts.
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π-Conjugated Amine-ZnO Nanohybrids for the Selective Detection of CO2 Gas at Room Temperature
Biswajit Mandal,Ankan Biswas,Aaryashree,Daya Shankar Sharma,Ritesh Bhardwaj,Mangal Das,Ataur Rahman,Sruthi Kuriakose,Madhu Bhaskaran,Sharath Sriram,Myo Than Htay,Apurba K. Das,Shaibal Mukherjee +12 more
TL;DR: In this article, the development of a new type of hybrid material comprising naphthalene-based π-conjugated amine (NBA) and zinc oxide (ZnO) nanohybrid, grown in situ on polydimethylsiloxane (PDMS) flexible substra...
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Impact of Schottky junctions in the transformation of switching modes in amorphous Y2O3-based memristive system
TL;DR: In this article, the authors studied factors that dominate the mode transformation of resistive switching in yttria-based memristive devices and reported a forming-free Al/Y2O3/Al based memristor fabricated by dual ion beam sputtering without any post-processing steps.