M
Mani Farjam
Researcher at University of California, San Diego
Publications - 23
Citations - 985
Mani Farjam is an academic researcher from University of California, San Diego. The author has contributed to research in topics: Graphene & Band gap. The author has an hindex of 13, co-authored 23 publications receiving 913 citations.
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Journal ArticleDOI
Tunable Band Gap in Hydrogenated Quasi-Free-Standing Graphene
Danny Haberer,Denis V. Vyalikh,Simone Taioli,Balázs Dóra,Mani Farjam,Jörg Fink,Dmitry Marchenko,Thomas Pichler,Klaus Ziegler,Stefano Simonucci,M. S. Dresselhaus,Martin Knupfer,Bernd Büchner,Alexander Grüneis +13 more
TL;DR: It is shown by angle-resolved photoemission spectroscopy that a tunable gap in quasi-free-standing monolayer graphene on Au can be induced by hydrogenation, and thereby provides a model system to study hydrogen storage in carbon materials.
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Comment on ``Band structure engineering of graphene by strain: First-principles calculations''
Mani Farjam,Hashem Rafii-Tabar +1 more
TL;DR: In this paper, first-principles calculations of the electronic band structure of graphene under uniaxial strain are presented, which refute the claim that strain opens band gaps in graphene.
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Evidence for a New Two‐Dimensional C4H‐Type Polymer Based on Hydrogenated Graphene
Danny Haberer,Cristina E. Giusca,Ying Wang,Hermann Sachdev,Hermann Sachdev,Alexander Fedorov,Mani Farjam,S. Akbar Jafari,Denis V. Vyalikh,Dmitry Yu. Usachov,Xianjie Liu,Uwe Treske,Mandy Grobosch,Oleg Yu. Vilkov,V. K. Adamchuk,Stephan Irle,S. Ravi P. Silva,Martin Knupfer,Bernd Büchner,Alexander Grüneis +19 more
TL;DR: Evidence for a New Two-Dimensional C 4 H-Type Polymer Based on Hydrogenated Graphene based on hydrogenated graphene is presented.
Journal ArticleDOI
Energy gap opening in submonolayer lithium on graphene: Local density functional and tight-binding calculations
Mani Farjam,Hashem Rafii-Tabar +1 more
TL;DR: In this article, the energy gap opening in periodic metal on graphene compounds was shown to be opened by lithium adsorption in a Kekul\'e-type structure, and the band structure of the textured tight-binding model was calculated and shown to reproduce the expected band gap and other characteristic degeneracy removals.
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The Chemistry of Imperfections in N-Graphene
Dmitry Yu. Usachov,Alexander Fedorov,Alexander Fedorov,Oleg Yu. Vilkov,Boris V. Senkovskiy,Boris V. Senkovskiy,V. K. Adamchuk,Lada V. Yashina,Andrey A. Volykhov,Mani Farjam,Nikolay I. Verbitskiy,Nikolay I. Verbitskiy,Alexander Grüneis,Clemens Laubschat,Denis V. Vyalikh,Denis V. Vyalikh +15 more
TL;DR: A method to handle N-impurities in graphene is demonstrated, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration.