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Francesca Campabadal

Researcher at Spanish National Research Council

Publications -  246
Citations -  4933

Francesca Campabadal is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Silicon & Dielectric. The author has an hindex of 28, co-authored 229 publications receiving 4379 citations. Previous affiliations of Francesca Campabadal include Autonomous University of Barcelona & University of Bergen.

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ATLAS detector and physics performance : Technical Design Report, 1

A. Airapetian, +1809 more
Journal ArticleDOI

Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

G. Lindström, +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Journal ArticleDOI

Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker

Francesca Campabadal, +154 more
TL;DR: The ABCD3TA as mentioned in this paper is a 128-channel ASIC with binary architecture for the readout of silicon strip particle detectors in the Semiconductor Tracker of the ATLAS experiment at the Large Hadron Collider (LHC).
Journal ArticleDOI

The ATLAS semiconductor tracker end-cap module

A. Abdesselam, +623 more
TL;DR: The ATLAS Semiconductor Tracker (SCT) as discussed by the authors has a total of about 3 million electronics channels each reading out every 25 ns into its own on-chip 3.3 mu s buffer.
Journal ArticleDOI

Electromechanical model of a resonating nano-cantilever-based sensor for high-resolution and high-sensitivity mass detection

TL;DR: In this paper, a simple linear electromechanical model for an electrostatically driven resonating cantilever is derived to determine dynamic quantities such as the capacitive current flowing through the cantilevers-driver system at the resonance frequency and calculate static magnitudes such as position and voltage of collapse or the voltage versus deflection characteristic.